Data retention after heavy ion exposure of floating gate...

IEEE Transactions on Nuclear Science 2003 / 12 Vol. 50; Iss. 6

Data retention after heavy ion exposure of floating gate memories: analysis and simulation

Larcher, L., Cellere, G., Paccagnella, A., Chimenton, A., Candelori, A., Modelli, A.
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Volume:
50
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/tns.2003.821598
Date:
December, 2003
File:
PDF, 530 KB
english, 2003
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