Effects of nitridation and annealing on interface properties of thermally oxidized SiO[sub 2]/SiC metal–oxide–semiconductor system
Lai, P. T., Chakraborty, Supratic, Chan, C. L., Cheng, Y. C.Volume:
76
Year:
2000
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.126769
File:
PDF, 293 KB
english, 2000