Volume 76; Issue 25

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Applied Physics Letters
Volume 76; Issue 25

Applied Physics Letters

Volume 76; Issue 25

1

Do P[sub b1] centers have levels in the Si band gap? Spin-dependent recombination study of the P[sub b1] âhyperfine spectrumâ

Mishima, Tetsuya D., Lenahan, Patrick M., Weber, Werner

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 347 KB

english, 2000

2

Cavity-Q-driven spectral shift in a cylindrical whispering-gallery-mode microcavity laser

Moon, Hee-Jong, Chough, Young-Tak, Kim, Jung Bog, An, Kyungwon, Yi, Jonghoon, Lee, Jongmin

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 398 KB

english, 2000

3

Surface photovoltage analysis of phase transformation of copper in p-type silicon

Ramappa, Deepak A.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 271 KB

english, 2000

4

High quality Ge on Si by epitaxial necking

Langdo, T. A., Leitz, C. W., Currie, M. T., Fitzgerald, E. A., Lochtefeld, A., Antoniadis, D. A.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 576 KB

english, 2000

5

High-dielectric-constant ceramic-powder polymer composites

Bai, Y., Cheng, Z.-Y., Bharti, V., Xu, H. S., Zhang, Q. M.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 332 KB

english, 2000

6

GaNâAlGaN heterostructure field-effect transistors over bulk GaN substrates

Asif Khan, M., Yang, J. W., Knap, W., Frayssinet, E., Hu, X., Simin, G., Prystawko, P., Leszczynski, M., Grzegory, I., Porowski, S., Gaska, R., Shur, M. S., Beaumont, B., Teisseire, M., Neu, G.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 292 KB

english, 2000

7

Mechanism of luminescence in InGaN/GaN multiple quantum wells

Yang, H. C., Kuo, P. F., Lin, T. Y., Chen, Y. F., Chen, K. H., Chen, L. C., Chyi, Jen-Inn

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 260 KB

english, 2000

8

Luminescence energy shift and carrier lifetime change dependence on carrier density in In[sub 0.12]Ga[sub 0.88]N/In[sub 0.03]Ga[sub 0.97]N quantum wells

Kuroda, Takamasa, Tackeuchi, Atsushi, Sota, Takayuki

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 341 KB

english, 2000

9

Organic ligand and solvent kinetics during the assembly of CdSe nanocrystal arrays using infrared attenuated total reflection

Kim, Bosang S., Avila, Luis, Brus, Louis E., Herman, Irving P.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 259 KB

english, 2000

10

In situ-grown carbon nanotube array with excellent field emission characteristics

Rao, A. M., Jacques, D., Haddon, R. C., Zhu, W., Bower, C., Jin, S.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 371 KB

english, 2000

11

Effects of heat treatment on diffusion of Cu atoms into CdTe single crystals

Soo, Y. L., Huang, S., Kim, S., Kioseoglou, G., Kao, Y. H., Compaan, A. D., Grecu, D., Albin, D.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 215 KB

english, 2000

12

Directed assembly of carbon nanotube electronic circuits

Wei, Y. Y., Eres, Gyula

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 590 KB

english, 2000

13

Oxygen-vacancy ordering as a fatigue mechanism in perovskite ferroelectrics

J. F. Scott, M. Dawber

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 211 KB

english, 2000

14

Detection of single photons using a field-effect transistor gated by a layer of quantum dots

Shields, A. J., O’Sullivan, M. P., Farrer, I., Ritchie, D. A., Hogg, R. A., Leadbeater, M. L., Norman, C. E., Pepper, M.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 237 KB

english, 2000

15

Erbium-implanted silica colloids with 80% luminescence quantum efficiency

Slooff, L. H., de Dood, M. J. A., van Blaaderen, A., Polman, A.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 278 KB

english, 2000

16

Schottky effect model of electrical activity of metallic precipitates in silicon

Plekhanov, P. S., Tan, T. Y.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 249 KB

english, 2000

17

Modification of the growth mode of Ge on Si by buried Ge islands

Usami, N., Araki, Y., Ito, Y., Miura, M., Shiraki, Y.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 390 KB

english, 2000

18

IV–VI compound midinfrared high-reflectivity mirrors and vertical-cavity surface-emitting lasers grown by molecular-beam epitaxy

Shi, Z., Xu, G., McCann, P. J., Fang, X. M., Dai, N., Felix, C. L., Bewley, W. W., Vurgaftman, I., Meyer, J. R.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 398 KB

english, 2000

19

Air-bridged lateral epitaxial overgrowth of GaN thin films

Kidoguchi, Isao, Ishibashi, Akihiko, Sugahara, Gaku, Ban, Yuzaburoh

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 491 KB

english, 2000

20

Enhanced nucleation in solid-phase crystallization of amorphous Si by imprint technology

Makihira, Kenji, Asano, Tanemasa

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 490 KB

english, 2000

21

Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal–oxide–semiconductor field-effect transistors

Kawaura, Hisao, Sakamoto, Toshitsugu, Baba, Toshio

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 388 KB

english, 2000

22

Conductivity and Hall-effect in highly resistive GaN layers

Kordoš, P., Javorka, P., Morvic, M., Betko, J., Van Hove, J. M., Wowchak, A. M., Chow, P. P.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 295 KB

english, 2000

23

Effects of nitridation and annealing on interface properties of thermally oxidized SiO[sub 2]/SiC metal–oxide–semiconductor system

Lai, P. T., Chakraborty, Supratic, Chan, C. L., Cheng, Y. C.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 293 KB

english, 2000

24

Plane wave excited vortices in photorefractive materials

Solymar, L., Kalinin, V.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 328 KB

english, 2000

25

Tunnel conductance as a probe of spin polarization decay in Cu dusted Co/Al[sub 2]O[sub 3]/Co tunnel junctions

LeClair, P., Swagten, H. J. M., Kohlhepp, J. T., de Jonge, W. J. M.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 385 KB

english, 2000

26

Temperature dependence and current transport mechanisms in Al[sub x]Ga[sub 1−x]N Schottky rectifiers

Zhang, A. P., Dang, G., Ren, F., Han, J., Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Redwing, J. M., Cho, H., Pearton, S. J.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 386 KB

english, 2000

27

Self-organized type-II In[sub 0.55]Al[sub 0.45]As/Al[sub 0.50]Ga[sub 0.50]As quantum dots realized on GaAs(311)A

Liu, H. Y., Zhou, W., Ding, D., Jiang, W. H., Xu, B., Liang, J. B., Wang, Z. G.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 245 KB

english, 2000

28

Fabrication of nanometer size gaps in a metallic wire

Lefebvre, J., Radosavljević, M., Johnson, A. T.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 367 KB

english, 2000

29

Pretreatment effects by aqua-regia solution on field emission of diamond film

Han, Sang Youn, Kim, Jong Kyu, Lee, Jong-Lam, Baik, Young-Joon

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 453 KB

english, 2000

30

Photoemission spectroscopic investigation on the interface formation of a ladder-type poly(para-phenylene) with aluminum

Koch, N., Pairleitner, R., Le, Q. Toan, Forsythe, E. W., Gao, Y., Leising, G.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 245 KB

english, 2000

31

Shock-induced transformation of β-Si[sub 3]N[sub 4] to a high-pressure cubic-spinel phase

Sekine, T., He, Hongliang, Kobayashi, T., Zhang, Ming, Xu, Fangfang

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 329 KB

english, 2000

32

Generation of wavelength-tunable single-mode picosecond pulses from a self-seeded gain-switched Fabry–Perot laser diode with a high-birefringence fiber loop mirror

Li, Shenping, Chiang, K. S., Gambling, W. A.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 245 KB

english, 2000

33

Pr–Zr–Co precipitation-hardened magnet

Gabay, A. M., Zhang, Yong, Hadjipanayis, G. C.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 364 KB

english, 2000

34

Influence of Si doping on optical characteristics of cubic GaN grown on (001) GaAs substrates

Li, Z. Q., Chen, H., Liu, H. F., Wan, L., Zhang, M. H., Huang, Q., Zhou, J. M., Yang, N., Tao, K., Han, Y. J., Luo, Y.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 249 KB

english, 2000

35

Oxygen migration during epitaxial regrowth in Cs[sup +]-irradiated α-quartz investigated by means of nuclear reaction analysis

Roccaforte, F., Harbsmeier, F., Dhar, S., Lieb, K. P.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 242 KB

english, 2000

36

Laser-assisted scanning tunnelling microscope detection of a molecular adsorbate

Smith, D. A., Owens, R. W.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 604 KB

english, 2000

37

Effect of interfacial silicon on the structural stability of C54–TiSi[sub 2] on SiO[sub 2]

Suh, Dongwoo, Kim, Hong Seung, Kang, Jin-Yeong

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 370 KB

english, 2000

38

High-energy He-ion irradiation-induced defects and their influence on the noise behavior of Pd/n-Si[sub 1−x]Ge[sub x] Schottky junctions

Mamor, M., Ouacha, H., Willander, M., Auret, F. D., Goodman, S. A., Ouacha, A., Sveinbjörnsson, E.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 246 KB

english, 2000

39

Electric-field dependence of mobility in conjugated polymer films

Rakhmanova, S. V., Conwell, E. M.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 230 KB

english, 2000

40

Improved flux pinning and anomalous magnetization peak in heavily overdoped Bi[sub 2−x]Pb[sub x]Sr[sub 2]CaCu[sub 2−y]Cr[sub y]O[sub 8+δ] single crystals

Sun, Y. P., Song, W. H., Zhao, B., Du, J. J., Wen, H. H., Zhao, Z. X., Ku, H. C.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 253 KB

english, 2000

41

In situ transmission electron microscopy study of electric-field-induced microcracking in single crystal Pb(Mg[sub 1/3]Nb[sub 2/3])O[sub 3]–PbTiO[sub 3]

Xu, Z., Tan, X., Han, P., Shang, J. K.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 419 KB

english, 2000

42

Influence of Ta antidiffusion barriers on the thermal stability of tunnel junctions

Cardoso, S., Ferreira, R., Freitas, P. P., Wei, P., Soares, J. C.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 248 KB

english, 2000

43

Theoretical investigation of nitrogen-doping effect on vacancy aggregation processes in Si

Kageshima, Hiroyuki, Taguchi, Akihito, Wada, Kazumi

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 227 KB

english, 2000

44

On-chip clock technology for ultrafast digital superconducting electronics

Gupta, Deepnarayan, Zhang, Yongming

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 416 KB

english, 2000

45

X-ray induced luminescence of solid argon at high pressures: A pressure probe

Baer, Bruce J., Yoo, Choong-Shik, Cynn, Hyunchae

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 286 KB

english, 2000

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