A study of deep-level defects in metalorganic vapor-phase-epitaxy-grown ZnSe on GaAs by deep-level transient spectroscopy
Wang, Y. H., Li, S. S.Volume:
68
Year:
1990
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.346476
File:
PDF, 573 KB
english, 1990