Volume 68; Issue 5

Journal of Applied Physics

Volume 68; Issue 5
2

SrB4O7:Sm2+ pressure optical sensor: Investigations in the megabar range

Year:
1990
Language:
english
File:
PDF, 672 KB
english, 1990
8

Computer simulation of virtual cathode oscillations

Year:
1990
Language:
english
File:
PDF, 688 KB
english, 1990
11

Plasma-cathode-initiated vacuum gap closure

Year:
1990
Language:
english
File:
PDF, 751 KB
english, 1990
13

Early stages of interface-trap transformation in metal-SiO2-(100)Si structures

Year:
1990
Language:
english
File:
PDF, 579 KB
english, 1990
14

Characteristics of erbium implants in silicon-on-insulator

Year:
1990
Language:
english
File:
PDF, 565 KB
english, 1990
16

Platinum metal etching in a microwave oxygen plasma

Year:
1990
Language:
english
File:
PDF, 1.24 MB
english, 1990
18

A new argon-ion laser based on an electrodeless plasma

Year:
1990
Language:
english
File:
PDF, 607 KB
english, 1990
19

Formation and structure of epitaxial ruthenium silicides on (111)Si

Year:
1990
Language:
english
File:
PDF, 708 KB
english, 1990
24

Tracer diffusion of 110Ag in YBa2Cu3O7−δ

Year:
1990
Language:
english
File:
PDF, 566 KB
english, 1990
25

Thickness dependence of the phase transition temperature in Ag2Se thin films

Year:
1990
Language:
english
File:
PDF, 937 KB
english, 1990
29

Physics modeling of a substrate-backed annular fuse

Year:
1990
Language:
english
File:
PDF, 1014 KB
english, 1990
35

Site preference and Faraday rotation in Ce-doped DyGalG sputtered films

Year:
1990
Language:
english
File:
PDF, 683 KB
english, 1990
37

Near-infrared optical properties of CoSi2 thin films

Year:
1990
Language:
english
File:
PDF, 774 KB
english, 1990
42

Generalized buoyancy forces in dispersions

Year:
1990
Language:
english
File:
PDF, 955 KB
english, 1990
44

The nonlinear description of a plasma maser

Year:
1990
Language:
english
File:
PDF, 870 KB
english, 1990
48

High-frequency response of p-substrate buried crescent InGaAsP lasers

Year:
1990
Language:
english
File:
PDF, 485 KB
english, 1990
52

Delayed optical detection of magnetic resonance for defects in Si and GaAs

Year:
1990
Language:
english
File:
PDF, 710 KB
english, 1990
53

Electrical properties of polycrystalline silicon under optical illumination

Year:
1990
Language:
english
File:
PDF, 998 KB
english, 1990
59

Raman spectroscopic investigation of ion-beam-irradiated glassy carbon

Year:
1990
Language:
english
File:
PDF, 886 KB
english, 1990
68

Reproducible group-V partial pressure rapid thermal annealing of InP and GaAs

Year:
1990
Language:
english
File:
PDF, 1.27 MB
english, 1990
70

Competing anisotropies and first-order magnetization processes

Year:
1990
Language:
english
File:
PDF, 1.17 MB
english, 1990
71

Heavily doped GaAs:Se. II. Electron mobility

Year:
1990
Language:
english
File:
PDF, 958 KB
english, 1990
72

Study of the Co-Ge/GaAs contact system

Year:
1990
Language:
english
File:
PDF, 1.63 MB
english, 1990
73

Helium implantation effects in hard hydrogenated carbon layers

Year:
1990
Language:
english
File:
PDF, 730 KB
english, 1990
78

Contact spreading and the Au3In-to-Au9In4 transition in the Au-InP system

Year:
1990
Language:
english
File:
PDF, 1.47 MB
english, 1990
83

Application of a semi-empirical sputtering model to secondary electron emission

Year:
1990
Language:
english
File:
PDF, 1.31 MB
english, 1990
84

Formation and characterization of a PtSi contacted n+p shallow junction

Year:
1990
Language:
english
File:
PDF, 1.25 MB
english, 1990