Comparative Study of High-$k/{\rm GaSb}$ Interfaces for Use...

IEEE Electron Device Letters 2014 / 01 Vol. 35; Iss. 1

Comparative Study of High-$k/{\rm GaSb}$ Interfaces for Use in Antimonide Based MOSFETs

Bhuwalka, Krishna K., Wang, Shih Wei, Noriega, Odille C., Holland, Martin C., Contreras-Guerrero, Rocio, Edirisooriya, Madavie, Doornbos, Gerben, Wang, Chien-Hsun, Myers, Thomas H., Droopad, Ravi, Pas
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Volume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2013.2289359
Date:
January, 2014
File:
PDF, 486 KB
english, 2014
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