Effect of low temperature postannealing on the hole density...

Applied Physics Letters 1996 Vol. 69; Iss. 17

Effect of low temperature postannealing on the hole density of C δ-doped GaAs and Al0.3Ga0.7As

Li, G., Jagadish, C.
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Volume:
69
Year:
1996
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.117736
File:
PDF, 329 KB
english, 1996
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