Volume 69; Issue 17

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Applied Physics Letters
Volume 69; Issue 17

Applied Physics Letters

Volume 69; Issue 17

1

Optical control of coherent optical phonons in bismuth films

Hase, M., Mizoguchi, K., Harima, H., Nakashima, S., Tani, M., Sakai, K., Hangyo, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 332 KB

english, 1996

2

Hysteresis relaxation in (Pb,La)(Zr,Ti)O3 thin film capacitors with (La,Sr)CoO3 electrodes

Aggarwal, S., Dhote, A. M., Ramesh, R., Warren, W. L., Pike, G. E., Dimos, D., Raymond, M. V., Tuttle, B. A., Evans, J. T.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 343 KB

english, 1996

3

Polarity determination of GaN films by ion channeling and convergent beam electron diffraction

Daudin, B., Rouviere, J. L., Arlery, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 478 KB

english, 1996

4

Contactless determination of current–voltage characteristics and minority‐carrier lifetimes in semiconductors from quasi‐steady‐state photoconductance data

Sinton, Ronald A., Cuevas, Andres

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 359 KB

english, 1996

5

Strain effects on valence band structure in wuÌrtzite GaN quantum wells

Sirenko, Yu. M., Jeon, J.-B., Kim, K. W., Littlejohn, M. A., Stroscio, M. A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 420 KB

english, 1996

6

Small atom diffusion and breakdown of the StokesâEinstein relation in the supercooled liquid state of the Zr46.7Ti8.3Cu7.5Ni10Be27.5 alloy

Geyer, U., Johnson, W. L., Schneider, S., Qiu, Y., Tombrello, T. A., Macht, M.-P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 355 KB

english, 1996

7

Optical transitions in GaN/AlxGa1âxN multiple quantum wells grown by molecular beam epitaxy

Smith, M., Lin, J. Y., Jiang, H. X., Salvador, A., Botchkarev, A., Kim, W., Morkoc, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 292 KB

english, 1996

8

Resonant-cavity photodiode operating at 1.55 μm with Burstein-shifted In0.53Ga0.47As/InP reflectors

Murtaza, S. S., Chelakara, R. V., Dupuis, R. D., Campbell, J. C., Dentai, A. G.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 315 KB

english, 1996

9

Influence of the interfaces on the anisotropic magnetoresistance of Ni/Co multilayers

F. Lesmes, A. Salcedo, J. J. Freijo, D. Garcia, A. Hernando, C. Prados

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 255 KB

english, 1996

10

Neutron diffraction measurement of stress-induced transformation in superelastic NiTi

Bourke, M. A. M., Vaidyanathan, R., Dunand, D. C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 265 KB

english, 1996

11

Deep-level defects and n-type-carrier concentration in nitrogen implanted GaN

Haase, D., Schmid, M., Kürner, W., Dörnen, A., Härle, V., Scholz, F., Burkard, M., Schweizer, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 279 KB

english, 1996

12

Oxygen ion beam-induced abnormal surface topographic development at Ta/Si interface

Kim, Kyung Joong, Jung, Kyung-Hoon, Moon, Dae Won

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 493 KB

english, 1996

13

Electromigration damage due to copper depletion in Al/Cu alloy conductors

Lloyd, J. R., Clement, J. J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 309 KB

english, 1996

14

Ultrafast high-intensity nonlinear absorption dynamics in low-temperature grown gallium arsenide

Siegner, U., Fluck, R., Zhang, G., Keller, U.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 308 KB

english, 1996

15

Non-Markovian gain of a quantum-well laser with many-body effects

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 361 KB

english, 1996

16

Microstructural development and optical properties of epitaxial Ge1−xCx alloys on Si(100)

Krishnamurthy, M., Yang, Bi-Ke, Weber, W. H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 644 KB

english, 1996

17

Thick AlxGa1−xAs: An intrinsically percolating barrier owing to its microscopic structural inhomogeneity

Kim, D. S., Ko, H. S., Kim, Y. M., Rhee, S. J., Hong, S. C., Yee, Y. H., Yee, D. S., Woo, J. C., Choi, H. J., Ihm, J., Woo, D. H., Kang, K. N.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 344 KB

english, 1996

18

Trap signatures of As precipitates and As-antisite-related defects in GaAs epilayers grown by molecular beam epitaxy at low temperatures

Goo, C. H., Lau, W. S., Chong, T. C., Tan, L. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 423 KB

english, 1996

19

Charge sensitivity of superconducting single-electron transistor

Korotkov, Alexander N.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 358 KB

english, 1996

20

Step-free surface grown on GaAs (111)B substrate by selective area metalorganic vapor phase epitaxy

Nishida, Toshio, Kobayashi, Naoki

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 1.01 MB

english, 1996

21

Resistance-expansion-temperature behavior of a disordered conductor–insulator composite

Heaney, Michael B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 294 KB

english, 1996

22

Holographic recording in indium–oxide (In2O3) and indium–tin–oxide (In2O3:Sn) thin films

Mailis, S., Boutsikaris, L., Vainos, N. A., Xirouhaki, C., Vasiliou, G., Garawal, N., Kiriakidis, G., Fritzsche, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 301 KB

english, 1996

23

Thin-film YBa2Cu3O7−x direct current SQUIDs with Josephson junctions made by direct electron beam writing

Nadgorny, B., Shokhor, S., Gurvitch, M., Hou, S. Y., Phillips, Julia M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 365 KB

english, 1996

24

Evaluation of molecular beam epitaxially grown AlGaAs/GaAs heterojunctions for bipolar transistor with InGaAs emitter contact layer

Izumi, Shigekazu, Sakai, Masayuki, Shimura, Teruyuki, Hayafuji, Norio, Sato, Kazuhiko, Otsubo, Mutsuyuki

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 358 KB

english, 1996

25

Limitations to n-type doping in diamond: The phosphorus-vacancy complex

Jones, R., Lowther, J. E., Goss, J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 330 KB

english, 1996

26

Simultaneous determination of the strain/stress tensor and the unstrained lattice constants by x-ray diffraction

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 355 KB

english, 1996

27

Coherent islands as preferential sites for sticking of Ge atoms in Si/Ge multilayers: Formation of conical shaped defects

Carlino, E., Tapfer, L., von Känel, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 862 KB

english, 1996

28

Monitoring surface stoichiometry with the (2×2) reconstruction during growth of hexagonal-phase GaN by molecular beam epitaxy

Hacke, P., Feuillet, G., Okumura, H., Yoshida, S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 381 KB

english, 1996

29

Effect of low temperature postannealing on the hole density of C δ-doped GaAs and Al0.3Ga0.7As

Li, G., Jagadish, C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 329 KB

english, 1996

30

Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs

Betko, J., Morvic, M., Novák, J., Förster, A., Kordos̆, P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 326 KB

english, 1996

31

Activation of luminescence in polycrystalline silicon thin films by ultrasound treatment

Koshka, J., Ostapenko, S., Ruf, T., Zhang, J. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 331 KB

english, 1996

32

Conductance anomaly in a quantum well

Kim, Chang Sub, Olendski, Oleg

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 316 KB

english, 1996

33

Band gap of Ge rich Si1−x−yGexCy alloys

Orner, B. A., Olowolafe, J., Roe, K., Kolodzey, J., Laursen, T., Mayer, J. W., Spear, J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 268 KB

english, 1996

34

A magneto-photoluminescence investigation of the band offset between InAs and arsenic-rich InAs1−xSbx alloys

Tang, P. J. P., Pullin, M. J., Li, Y. B., Phillips, C. C., Stradling, R. A., Chung, S. J., Yuen, W. T., Hart, L., Bain, D. J., Galbraith, I.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 264 KB

english, 1996

35

Electron beam induced current measurements of minority carrier diffusion length in gallium nitride

Chernyak, Leonid, Osinsky, Andrei, Temkin, Henryk, Yang, J. W., Chen, Q., Asif Khan, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 266 KB

english, 1996

36

Synthesis of InP-based 1.3 μm band gap pseudoalloy by organometallic vapor phase epitaxy

Emerson, D. T., Shealy, J. R.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 842 KB

english, 1996

37

Determining band offsets using surface photovoltage spectroscopy: The InP/In0.53Ga0.47As heterojunction

Leibovitch, M., Kronik, L., Mishori, B., Shapira, Yoram, Hanson, C. M., Clawson, A. R., Ram, Prakhya

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 262 KB

english, 1996

38

High resistivity and ultrafast carrier lifetime in argon implanted GaAs

Walukiewicz, W., Liliental-Weber, Z., Jasinski, J., Almonte, M., Prasad, A., Haller, E. E., Weber, E. R., Grenier, P., Whitaker, J. F.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 335 KB

english, 1996

39

Below threshold conduction in a-Si:H thin film transistors with and without a silicon nitride passivating layer

Slade, H. C., Shur, M. S., Deane, S. C., Hack, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 264 KB

english, 1996

40

Near-field scanning optical microscopy of polarization bistable laser diodes

Lienau, Ch., Richter, A., Klehr, A., Elsaesser, T.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 622 KB

english, 1996

41

Quantum cascade disk lasers

Faist, Jero^me, Gmachl, Claire, Striccoli, Marinella, Sirtori, Carlo, Capasso, Federico, Sivco, Deborah L., Cho, Alfred Y.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 344 KB

english, 1996

42

Solid-phase epitaxial growth of amorphized GaAs: The influence of macroscopic nonstoichiometry

Belay, K. B., Llewellyn, D. J., Ridgway, M. C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 297 KB

english, 1996

43

Unusual enhancement of transient reflecting grating signal under a surface plasmon resonance condition

Katayama, Kenji, Shen, Qing, Harata, Akira, Sawada, Tsuguo

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 305 KB

english, 1996

44

Aluminum-doped n-type ZnSTe alloy grown by molecular beam epitaxy

Sou, I. K., Yang, Z., Mao, J., Ma, Z. H., Tong, K. W., Yu, P., Wong, G. K. L.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 249 KB

english, 1996

45

Noncontact measurement of transport properties of long-bulk-carrier-lifetime Si wafers using photothermal radiometry

Salnick, Alex, Mandelis, Andreas, Jean, Claude

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 331 KB

english, 1996

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