Dose dependence of the silicon near-surface modifications...

Journal of Applied Physics 1989 Vol. 65; Iss. 5

Dose dependence of the silicon near-surface modifications caused by CF4 reactive ion-beam etching

Lejeune, C., Grandchamp, J. P., Gilles, J. P., Collard, E., Scheiblin, P.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
65
Year:
1989
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.342871
File:
PDF, 697 KB
english, 1989
Conversion to is in progress
Conversion to is failed