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Improvement of the SiO2/Si interface of metal-oxide-semiconductor devices using gate dielectrics formed by NF3-aided oxidation and N2O post-annealing
Huang, Jenn Gwo, Jaccodine, Ralph J., Young, Donald R.Volume:
75
Year:
1994
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.356230
File:
PDF, 1.05 MB
english, 1994