Volume 75; Issue 5

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Journal of Applied Physics
Volume 75; Issue 5

Journal of Applied Physics

Volume 75; Issue 5

1

Distribution of radial energy deposition around the track of energetic charged particles in silicon

Fageeha, O., Howard, J., Block, R. C.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 768 KB

english, 1994

2

The effect of the InAs layer thickness on the peak current density and subband properties of the GaSb/InAs/GaSb/AlSb/InAs structures

Liu, M. H., Wang, Y. H., Houng, M. P.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.07 MB

english, 1994

3

Atomic layer epitaxy and structural characterization of InP and InAs/InP heterostructures

Tran, C. A., Masut, R. A., Brebner, J. L., Jouanne, M.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.29 MB

english, 1994

4

Space charge migration in discharging current measurement

Nagashima, H. N., Faria, R. M.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 833 KB

english, 1994

5

Photoluminescence of GaAs doped with dimethylaluminum methoxide during organometallic vapor phase epitaxy

Park, Y., Skowronski, M.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 708 KB

english, 1994

6

Effects of additive elements on electrical properties of tantalum oxide films

Fujikawa, Hisayoshi, Taga, Yasunori

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.06 MB

english, 1994

7

Optical properties of GaAs/AlxGa1−xAs multiple quantum wells versus electric field including exciton transition broadening effects in optical modulators

C. Lin, J. M. Meese, Y. Chang

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.35 MB

english, 1994

8

Dislocation scattering effects on electron mobility in InAsSb

Egan, R. J., Chin, V. W. L., Tansley, T. L.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 675 KB

english, 1994

9

Energetic model of ferromagnetic hysteresis

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.63 MB

english, 1994

10

Simultaneous extraction of bulk lifetime and surface recombination velocities from free carrier absorption transients

Ling, Z. G., Ajmera, P. K., Kousik, G. S.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 611 KB

english, 1994

11

Annealing behavior of deep-level defects in 1 MeV electron irradiated GaAs

Lai, S. T., Nener, B. D.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 661 KB

english, 1994

12

NiGe-based ohmic contacts to n-type GaAs. I. Effects of In addition

Oku, Takeo, Wakimoto, Hiroki, Otsuki, Akira, Murakami, Masanori

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.39 MB

english, 1994

13

Spectral characteristics of visible light emission from porous Si: Quantum confinement or impurity effect?

Bondarenko, V. P., Borisenko, V. E., Dorofeev, A. M., Germanenko, I. N., Gaponenko, S. V.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 631 KB

english, 1994

14

Lower critical field and surface barrier in sintered Bi2Sr2CaCu2O8+δ superconductor

Chen, D.-X., Hernando, A., Conde, F., Ramírez, J., González-Calbet, J. M., Vallet, M.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.02 MB

english, 1994

15

Radiation effects in high-temperature thermal diffusion measurements using the laser-flash method

Srinivasan, N. S., Xiao, X. G., Seetharaman, S.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 907 KB

english, 1994

16

An array of dislocations in a strained epitaxial layer. II. Work hardening

Zhang, Tong-Yi, Hack, J. E., Guido, L. J.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 565 KB

english, 1994

17

Elastic constants and high-temperature elastic anomalies near 425 K in lithium hydrazinium sulfate

Godfrey, L., Philip, J., Sebastian, M. T.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 734 KB

english, 1994

18

Many-electron effects on transport through two-dimensional quantum structures

Wang, Jian, Wang, Yongjiang, Guo, Hong

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 651 KB

english, 1994

19

Investigation of time-dependent resonant interband tunneling

Wang, Jian, Wang, Yongjiang, Guo, Hong

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 619 KB

english, 1994

20

Photoluminescence of Mg-ion implantation in low-temperature grown GaAs

Yu, P. W., Yen, M. Y., Stutz, C. E.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 777 KB

english, 1994

21

Structural model of sulfur on GaAs(100)

Wang, Xue-sen, Weinberg, W. Henry

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 569 KB

english, 1994

22

Defect-enhanced interdiffusion at the InGaAs/InAlAs interface due to Si ion implantation

Yamamura, Shin’ichi, Saito, Riichiro, Yugo, Shigemi, Kimura, Tadamasa, Murata, Michio, Kamiya, Takeshi

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 853 KB

english, 1994

23

Surface modification of CaF2 on Si(111) by low-energy electron beam for over growth of GaAs films

Izumi, Akira, Tsutsui, Kazuo, Furukawa, Seijiro

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 771 KB

english, 1994

24

Annealing behavior of Pd/a-Ge bilayer films

Wu, Xeuhua, Feng, Yuezhong, Li, Boquan, Wu, Ziqin, Zhang, Shuyuan

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 706 KB

english, 1994

25

Drift and diffusion in low-dimensional p-n junctions

Sadra, K., Streetman, B. G.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 798 KB

english, 1994

26

Investigation of trap emission kinetics in metal-oxide-semiconductor capacitors using a pump-probe charge integrating technique

Poler, J. C., Irene, E. A.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.38 MB

english, 1994

27

The metastable Al-Zr alloy thin films prepared by alternate sputtering deposition

Ho, Jin-Kuo, Lin, Kwang-Lung

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.10 MB

english, 1994

28

Improvement of the SiO2/Si interface of metal-oxide-semiconductor devices using gate dielectrics formed by NF3-aided oxidation and N2O post-annealing

Huang, Jenn Gwo, Jaccodine, Ralph J., Young, Donald R.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.05 MB

english, 1994

29

Erratum: ‘‘Tantalum nitride films as resistors on chemical vapor deposited diamond substrates’’ [J. Appl. Phys. 73, 5208 (1993)]

Katz, A., Pearton, S. J., Nakahara, S., Baiocchi, F. A., Lane, E., Kovalchick, J.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 264 KB

english, 1994

30

Analysis of conventional and three-dimensional atom probe data for multiphase materials

Camus, Eric, Abromeit, Christian

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.43 MB

english, 1994

31

Pressure of phosphorus in equilibrium with solid InP at different temperatures

Fornari, R., Brinciotti, A., Sentiri, A., Görög, T., Curti, M., Zuccalli, G.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 733 KB

english, 1994

32

X-ray topographic study on dislocation configuration around indentation in a plastic region of Si single crystal

Yoshioka, M., Kawamura, K.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 976 KB

english, 1994

33

The effects of He plasma interactions with SiH4 in remote plasma enhanced chemical vapor deposition

Theil, Jeremy A., Powell, Gary

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 2.24 MB

english, 1994

34

An investigation of the electrical and chemical properties of intimate metal-InyAl1−yAs(100) interfaces

Clark, S. A., Wilks, S. P., Morris, J. I., Woolf, D. A., Williams, R. H.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.20 MB

english, 1994

35

The effect of high-Z atomic radiators on the x-ray emission rate from a laser-produced nitrogen plasma

Filbert, P. C., Kohler, D. A., Walton, R. A.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.10 MB

english, 1994

36

Some analyses of potential profiles of forward-biased high-low junctions

De, S. S., Ghosh, A. K.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 846 KB

english, 1994

37

Long wavelength (λ∼1.5 μm) native-oxide-defined InAlAs-InP-InGaAsP quantum well heterostructure laser diodes

Caracci, S. J., Krames, M. R., Holonyak, N., Ludowise, M. J., Fischer-Colbrie, A.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 597 KB

english, 1994

38

Alloy broadening in photoluminescence spectra of GaxIn1−xAsyP1−y lattice matched to InP

Benzaquen, R., Charbonneau, S., Sawadsky, N., Roth, A. P., Leonelli, R., Hobbs, L., Knight, G.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.10 MB

english, 1994

39

Fine structure in the χ(2) signals of inorganic-organic nanocomposites

Kador, L., Fischer, R., Kasemann, R., Brück, S., Dürr, H.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 604 KB

english, 1994

40

TeSeF films by TeSe-SeF6/Ar reactive sputtering for ablative optical recording

Horie, Michikazu, Tamura, Takanori, Ohgaki, Mitsuaki, Yoshida, Hidemi, Kisaka, Yoshiyuki, Kobayashi, Yoshimitsu

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.56 MB

english, 1994

41

An array of dislocations in a strained epitaxial layer. I. Elastic energy

Zhang, Tong-Yi, Hack, J. E., Guido, L. J.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 724 KB

english, 1994

42

Formation of stress reduced silicon oxide films by Ar/H2 sputtering method

Takahashi, Hiroki, Nagata, Hirotoshi, Kataoka, Haruki, Takai, Hiroshi

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 847 KB

english, 1994

43

Low-temperature thermoluminescence of cuprate high-temperature superconductors

Katz, S., Roth, M., Golben, J., Vlasse, M.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 695 KB

english, 1994

44

Signal and noise with a magnetic circular dichroism detection system in optical data storage

Schlichting, W., Milster, T. D., Wang, M. S., Brucker, C.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 613 KB

english, 1994

45

Measurement and control of ion-doping-induced defects in cadmium telluride films

Kim, Donghwan, Fahrenbruch, Alan L., Lopez-Otero, Adolfo, Bube, Richard H., Jones, Kim M.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.16 MB

english, 1994

46

Correlation of interface recombination and dislocation density at GalnP/GaAs heterojunctions

Müllenborn, M., Matney, K., Goorsky, M. S., Haegel, N. M., Vernon, S. M.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 629 KB

english, 1994

47

Modeling of the static properties for double-δ transistors

Schulze, D., Gobsch, G., Eisele, I., Kiunke, W.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 769 KB

english, 1994

48

A new magnetoplasma amplification effect in the optical frequency range

Iida, Takashi, Mizushima, Yoshihiko

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 958 KB

english, 1994

49

Elimination of an artifact in the photoluminescence spectra of heavily doped C-GaAs epitaxial layers on undoped GaAs substrates

Lu, Z. H., Majerfeld, A.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 726 KB

english, 1994

50

Effect of various obstacles on oscillatory magnetoconductance of quantum double-coupled channels

Fan, Xu-dong, Gu, Ben-yuan, Yang, Guo-zhen, Lin, Tsung-han

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.12 MB

english, 1994

51

Photoluminescence mechanisms of porous Si oxidized by dry oxygen

Takazawa, Akira, Tamura, Tetsuro, Yamada, Masao

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.09 MB

english, 1994

52

Microscopic mechanics of fiber networks

Åström, Jan, Saarinen, Sami, Niskanen, Kaarlo, Kurkijärvi, Juhani

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.38 MB

english, 1994

53

Anomalous photovoltage in Cd0.80Zn0.20Te thin films

Samanta, B., Chaudhuri, A. K., Sharma, S. L., Pal, U.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 619 KB

english, 1994

54

Enhanced collimation in narrow channels fabricated by focused-ion-beam implantation

Bever, T., Hirayama, Y., Tarucha, S.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 782 KB

english, 1994

55

Modeling electronegative plasma discharges

Lichtenberg, A. J., Vahedi, V., Lieberman, M. A., Rognlien, T.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.24 MB

english, 1994

56

Depth-dependent lattice parameter variation and stress-induced magnetic anisotropy of ultrathin Dy2BiFe4GaO12 garnet films deposited on the glass substrate by pyrolysis

Lee, Jung H., Choo, Woong K., Kim, Yong S., Yun, Doo W.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 865 KB

english, 1994

57

Study of the crystal growth of a (15,17,1) vicinal plane on a Si(110) surface using high-temperature scanning tunneling microscopy

Yamamoto, Youiti, Sueyoshi, Takashi, Sato, Tomoshige, Iwatsuki, Masashi

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.25 MB

english, 1994

58

1.5 μm room-temperature luminescence from Er-implanted oxygen-doped silicon epitaxial films grown by molecular beam epitaxy

Serna, R., Snoeks, E., van den Hoven, G. N., Polman, A.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 747 KB

english, 1994

59

GaAs bidirectional bistability switch using double triangular barrier structures

Yarn, Kao-Feng, Wang, Yeong-Her, Chang, Chun-Yen

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 745 KB

english, 1994

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