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Sub-0.1-eV Effective Schottky-Barrier Height for NiSi on n-Type Si (100) Using Antimony Segregation
Hoong-Shing Wong,, Lap Chan,, Samudra, G., Yee-Chia Yeo,Volume:
28
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2007.901668
Date:
August, 2007
File:
PDF, 272 KB
english, 2007