Volume 28; Issue 8

IEEE Electron Device Letters

Volume 28; Issue 8

1

Analysis of Temperature in Phase Change Memory Scaling

Kim, S., Wong, H.-S.P.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 361 KB

english, 2007

2

Simulation of Graphene Nanoribbon Field-Effect Transistors

Fiori, G., Iannaccone, G.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 155 KB

english, 2007

3

Ultrahigh-Speed 0.5 V Supply Voltage $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$ Quantum-Well Transistors on Silicon Substrate

Datta, S., Dewey, G., Fastenau, J.M., Hudait, M.K., Loubychev, D., Liu, W.K., Radosavljevic, M., Rachmady, W., Chau, R.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 262 KB

english, 2007

4

Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

Woo Young Choi,, Byung-Gook Park,, Jong Duk Lee,, Tsu-Jae King Liu,

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 160 KB

english, 2007

5

Use of a High-Work-Function Ni Electrode to Improve the Stress Reliability of Analog $\hbox{SrTiO}_{3}$ Metal–Insulator–Metal Capacitors

Chiang, K.C., Cheng, C.H., Jhou, K.Y., Pan, H.C., Hsiao, C.N., Chou, C.P., McAlister, S.P., Chin, A., Hwang, H.L.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 245 KB

english, 2007

6

n-Resistance Modulation of High Voltage GaN HEMT on Sapphire Substrate Under High Applied Voltage]]>

Saito, W., Nitta, T., Kakiuchi, Y., Saito, Y., Tsuda, K., Omura, I., Yamaguchi, M.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 225 KB

english, 2007

7

Thickness Scaling and Reliability Comparison for the Inter-Poly High- $\kappa$ Dielectrics

Yung-Yu Chen,, Chao-Hsin Chien,

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 103 KB

english, 2007

8

Double Heterojunction Bipolar Transistors Grown by Solid-Source Molecular Beam Epitaxy

Shu-Han Chen,, Sheng-Yu Wang,, Rei-Jay Hsieh,, Jen-Inn Chyi,

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 207 KB

english, 2007

9

Border-Trap Characterization in High-$\kappa$ Strained-Si MOSFETs

Debabrata Maji,, Duttagupta, S.P., Rao, V.R., Chia Ching Yeo,, Byung-Jin Cho,

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 122 KB

english, 2007

10

With an Ultrahigh $f_{\max}$ of 520

Lee, Kang-Sung, Kim, Young-Su, Hong, Yun-Ki, Jeong, Yoon-Ha

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 275 KB

english, 2007

11

Pinch-Off Voltage-Adjustable High-Voltage Junction Field-Effect Transistor

Chorng-Wei Liaw,, Leaf Yeh,, Ming-Jang Lin,, Chrong Jung Lin,

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 460 KB

english, 2007

12

Low-Temperature Polymer-Based Three-Dimensional Silicon Integration

Kim, S.K., Lei Xue,, Tiwari, S.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 350 KB

english, 2007

13

Enhanced Gate Swing in InP HEMTs With High Threshold Voltage by Means of InAlAsSb Barrier

Suemitsu, T., Yokoyama, H., Sugiyama, H., Tokumitsu, M.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 124 KB

english, 2007

14

High-Voltage Self-Aligned p-Channel DMOS-IGBTs in 4H-SiC

Sui, Y., Wang, X., Cooper, J.A.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 210 KB

english, 2007

15

Investigation of Carrier Transport in Germanium MOSFETs With $\hbox{WN}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{AlN}$ Gate Stacks

Ritenour, Andrew, Hennessy, J., Antoniadis, D. A.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 134 KB

english, 2007

16

Sub-0.1-eV Effective Schottky-Barrier Height for NiSi on n-Type Si (100) Using Antimony Segregation

Hoong-Shing Wong,, Lap Chan,, Samudra, G., Yee-Chia Yeo,

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 272 KB

english, 2007

17

Numerical Simulation of Low-Frequency Noise in Polysilicon Thin-Film Transistors

Pichon, L., Boukhenoufa, A., Cordier, C., Cretu, B.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 240 KB

english, 2007

18

High-$Q$ Integrated Inductor Using Post-CMOS Selectively Grown Porous Silicon (SGPS) Technique for RFIC Applications

Chen Li,, Huailin Liao,, Chuan Wang,, Jun Yin,, Ru Huang,, Yangyuan Wang,

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 549 KB

english, 2007

19

An Improved Planar Triode With ZnO Nanopin Field Emitters

Lei Wei,, Xiaobing Zhang,, Chaogang Lou,, Zuoya Zhu,

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 361 KB

english, 2007

20

An Efficient Macromodeling Approach for Simulating Carbon-Nanotube Field-Emission Triode Devices in Display Applications

Xiaojun Guo,, Silva, S.R.P.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 343 KB

english, 2007

21

Novel Approach to Reduce Source/Drain Series and Contact Resistance in High-Performance UTSOI CMOS Devices Using Selective Electrodeless CoWP or CoB Process

Pan, J., Topol, A., Shao, I., Chun-Yung Sung,, Iacoponi, J., Ming-Ren Lin,

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 408 KB

english, 2007

22

Extraction of the Threshold-Voltage Shift by the Single-Pulse Technique

Heh, D., Young, C.D., Rino Choi,, Bersuker, G.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 103 KB

english, 2007

23

Analyzing Conductance of Mixed Carbon-Nanotube Bundles for Interconnect Applications

Haruehanroengra, S., Wei Wang,

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 263 KB

english, 2007

24

Flash Memory Cells

Park, M., Kangdeog Suh,, Keonsoo Kim,, Hur, S., Kim, K., Lee, W.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 284 KB

english, 2007

25

Nanowire Channel

Do, Q.-T., Blekker, K., Regolin, I., Prost, W., Tegude, F.J.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 216 KB

english, 2007

26

Defect Passivation by Selenium-Ion Implantation for Poly-Si Thin Film Transistors

Lai, J., Tsu-Jae King Liu,

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 253 KB

english, 2007

27

Amorphous-SiCBN-Based Metal–Semiconductor–Metal Photodetector for High-Temperature Applications

Vijayakumar, A., Sundaram, K.B., Todi, R.M.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 214 KB

english, 2007

28

Impact of Parameter Variations and Random Dopant Fluctuations on Short-Channel Fully Depleted SOI MOSFETs With Extremely Thin BOX

Ohtou, T., Sugii, N., Hiramoto, T.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 408 KB

english, 2007

29

High-Performance Polycrystalline-Silicon TFT by Heat-Retaining Enhanced Lateral Crystallization

Po-Tsun Liu,, Hsing-Hua Wu,

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 322 KB

english, 2007

30

Electromigration Resistant Power Delivery Systems

Sekar, D.C., Dang, B., Davis, J.A., Meindl, J.D.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 338 KB

english, 2007

31

IEEE Electron Devices Society Meetings Calendar for 2007 (as of 02 July 2007)

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 55 KB

english, 2007