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Effect of Al doping on low-temperature epitaxy of 3C-SiC/Si by chemical vapor deposition using hexamethyldisilane as a source material
Takahashi, Koji, Nishino, Shigehiro, Saraie, JunjiVolume:
61
Year:
1992
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.108313
File:
PDF, 681 KB
english, 1992