Volume 61; Issue 17

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Applied Physics Letters
Volume 61; Issue 17

Applied Physics Letters

Volume 61; Issue 17

1

Change in conductance is the fundamental measure of spin‐valve magnetoresistance

Dieny, B., Nozieres, J. P., Speriosu, V. S., Gurney, B. A., Wilhoit, D. R.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 671 KB

english, 1992

2

Magnetic force microscopy utilizing an ultrasensitive vertical cantilever geometry

DiCarlo, A., Scheinfein, M. R., Chamberlin, R. V.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 702 KB

english, 1992

3

Effect of one monolayer of surface gold atoms on the epitaxial growth of InAs nanowhiskers

Yazawa, M., Koguchi, M., Muto, A., Ozawa, M., Hiruma, K.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 713 KB

english, 1992

4

Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures

Chen, Kunji, Huang, Xinfan, Xu, Jun, Feng, Duan

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 635 KB

english, 1992

5

Tunable wavelength conversion using a liquid crystal filter and a bistable laser diode

Tsuda, Hiroyuki, Hirabayashi, Katsuhiko, Iwamura, Hidetoshi, Kurokawa, Takashi

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 605 KB

english, 1992

6

Disorder induced Raman scattering of nanocrystalline carbon

Li, Fang, Lannin, Jeffrey S.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 609 KB

english, 1992

7

Second harmonic generation in InGaAsP waveguides at 1.3 μm wavelength

Cada, M., Svilans, M., Janz, S., Bierman, R., Normandin, R., Glinski, J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 692 KB

english, 1992

8

Photoreflectance characterization of an InP/InGaAs heterojunction bipolar transistor structure

Yan, D., Pollak, Fred H., Boccio, V. T., Lin, C. L., Kirchner, P. D., Woodall, J. M., Gee, Russell C., Asbeck, Peter M.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 570 KB

english, 1992

9

Magnetization studies of the influence of fast neutron irradiation on critical current density of melt-textured YBa2Cu3O7−x

Puźniak, R., Wiśniewski, A., Szymczak, H., Wang, Jingrong, Zhang, Pingxiang, Zhou, Lian

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 696 KB

english, 1992

10

Some notes on the metal-insulator-semiconductor conductance technique

Pluciński, K. J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 514 KB

english, 1992

11

In-depth distribution of ion irradiation defects evaluated by mobility of Al0.3Ga0.7As/GaAs two-dimensional electron gas

Takeuchi, Yukihiro, Soga, Hajime, Ueno, Yoshiki, Kanayama, Toshihiko, Sugiyama, Yoshinobu, Tacano, Munecazu

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 570 KB

english, 1992

12

Pulsed excimer laser ablated barium titanate thin films

Roy, D., Krupanidhi, S. B.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 613 KB

english, 1992

13

Apparent super resolution in high-contrast photoresists

Peckerar, Martin, Rebbert, Milton, Gopalakrishnan, Ganesh

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 659 KB

english, 1992

14

Improvement of the photorefractive efficiency of BaTiO3 by γ irradiation

Moore, Thomas R., Boyd, Robert W.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 600 KB

english, 1992

15

Etch masks for microfabrication produced by electron beam sublimation of graphitic carbon deposited as semimetallic amorphous carbon thin films

Porkolab, G. A., Wolf, E. D.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 744 KB

english, 1992

16

Enhanced breakdown voltages in strained InGaAs/GaAs structures

David, J. P. R., Morley, M. J., Wolstenholme, A. R., Grey, R., Pate, M. A., Hill, G., Rees, G. J., Robson, P. N.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 614 KB

english, 1992

17

Stabilization of C-49 Ti(AlxSi1−x)2 observed from the reaction between TiSi2 and Al

Chung, I., Nam, H. G., Bene’, R. W.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 623 KB

english, 1992

18

X-ray laser frequency near-doubling and generation of tunable coherent x rays in plasma

Shkolnikov, P. L., Kaplan, A. E., Muendel, M. H., Hagelstein, P. L.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 593 KB

english, 1992

19

Effect of Al doping on low-temperature epitaxy of 3C-SiC/Si by chemical vapor deposition using hexamethyldisilane as a source material

Takahashi, Koji, Nishino, Shigehiro, Saraie, Junji

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 681 KB

english, 1992

20

Liquid precursor two-step aluminum thin-film deposition on KrF-laser patterned palladium

Lehmann, O., Stuke, M.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 700 KB

english, 1992

21

Lattice relaxed impurity and persistent photoconductivity in nitrogen doped 6H-SiC

Dissanayake, A. S., Jiang, H. X.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 588 KB

english, 1992

22

Partially exposed polymer dispersed liquid crystals for boundary layer investigations

Parmar, Devendra S., Singh, Jag J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 648 KB

english, 1992

23

Analysis of distributed-feedback lasers: A recursive Green’s function approach

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 566 KB

english, 1992

24

Nuclear magnetic resonance study on Si-H microstructure in hydrogenated amorphous silicon prepared by diluted-hydrogen and hydrogen-atom-treatment methods

Hsu, Kuo-Chiang, Hwang, Huey-Liang

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 564 KB

english, 1992

25

In situ probing at the growth temperature of the surface composition of (InGa)As and (InAl)As

Gerard, Jean-Michel

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 614 KB

english, 1992

26

Exact results in linear thermomechanics of fluid-saturated porous media

Berryman, James G., Milton, Graeme W.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 547 KB

english, 1992

27

Consideration of the thermal energy in hydrodynamic transport models

Curow, Matthias

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 495 KB

english, 1992

28

High activation efficiency in Mg+ implanted GaAs by P+ coimplantation

Shen, Honglie, Zhou, Zuyao, Xu, Honglai, Xia, Guanqun, Zou, Shichang

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 550 KB

english, 1992

29

Use of Zn doping for tuning of the operating temperature of a bolometer based on the high Tc superconductor thin film of Y1Ba2Cu3O7−δ

Ogale, S. B., Vedawyas, M., Bendre, G. S. T., Kanetkar, S. M.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 539 KB

english, 1992

30

Transverse electric and transverse magnetic polarization active intersubband transitions in narrow InGaAs quantum wells

Peng, L. H., Smet, J. H., Broekaert, T. P. E., Fonstad, C. G.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 623 KB

english, 1992

31

Growth morphology of epitaxial ErAs/GaAs by x-ray extended range specular reflectivity

Miceli, P. F., Palmstro̸m, C. J., Moyers, K. W.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 623 KB

english, 1992

32

Arsine flow requirement for the flow modulation growth of high purity GaAs using adduct-grade triethylgallium

Pitts, B. L., Emerson, D. T., Shealy, J. R.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 603 KB

english, 1992

33

Use of triethylindium and bisphosphinoethane for the growth on InP by chemical beam epitaxy

Chin, Albert, Martin, Paul, Das, Utpal, Mazurowski, John, Ballingall, Jim

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 655 KB

english, 1992

34

Triple quantum well electron transfer infrared modulator

Berger, V., Dupont, E., Delacourt, D., Vinter, B., Vodjdani, N., Papuchon, M.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 571 KB

english, 1992

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