Demonstration of Y1Ba2Cu3O7−δ and complementary metal-oxide-semiconductor device fabrication on the same sapphire substrate
Burns, M. J., de la Houssaye, P. R., Russell, S. D., Garcia, G. A., Clayton, S. R., Ruby, W. S., Lee, L. P.Volume:
63
Year:
1993
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.109758
File:
PDF, 760 KB
english, 1993