Volume 63; Issue 9

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Applied Physics Letters
Volume 63; Issue 9

Applied Physics Letters

Volume 63; Issue 9

1

Refractive index fluctuations in deformed Ti:LiNbO3 waveguides due to SiO2 overlayer deposition

Nagata, Hirotoshi, Kiuchi, Kazumasa, Sugamata, Tohru

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 643 KB

english, 1993

2

Surface acoustic wave soliton propagating on the metallic grating waveguide

Cho, Yasuo, Miyagawa, Nozomu

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 601 KB

english, 1993

3

Electronic structure of aluminum nitride: Theory and experiment

Loughin, S., French, R. H., Ching, W. Y., Xu, Y. N., Slack, G. A.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 663 KB

english, 1993

4

High electron mobility transistor based on a GaN-AlxGa1âxN heterojunction

Asif Khan, M., Bhattarai, A., Kuznia, J. N., Olson, D. T.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 445 KB

english, 1993

5

Tip-induced anodization of titanium surfaces by scanning tunneling microscopy: A humidity effect on nanolithography

Sugimura, Hiroyuki, Uchida, Tatsuya, Kitamura, Noboru, Masuhara, Hiroshi

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 593 KB

english, 1993

6

Novel surface emitting GaAs/AlGaAs laser diodes based on surface mode emission

KoÌck, A., Seeberg, A., Rosenberger, M., Gmachl, C., Gornik, E., Thanner, C., Korte, L.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 646 KB

english, 1993

7

Resonant tunneling of X-band electrons from AlAs through GaAs/AlAs/GaAs double barrier structure

Shieh, Tung-Ho, Lee, Si-Chen

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 619 KB

english, 1993

8

Atomic-scale view of AlGaAs/GaAs heterostructures with cross-sectional scanning tunneling microscopy

Johnson, M. B., Maier, U., Meier, H.-P., Salemink, H. W. M.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 809 KB

english, 1993

9

Influence of wettability on anodic bias induced electroluminescence in porous silicon

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 653 KB

english, 1993

10

Excitonic transitions in InGaP/InAlGaP strained quantum wells

Schneider, R. P., Bryan, R. P., Jones, E. D., Lott, J. A.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 693 KB

english, 1993

11

Terahertz four-wave mixing spectroscopy for study of ultrafast dynamics in a semiconductor optical amplifier

Zhou, Jianhui, Park, Namkyoo, Dawson, Jay W., Vahala, Kerry J., Newkirk, Michael A., Miller, Barry I.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 650 KB

english, 1993

12

New degradation mechanism associated with hydrogen in bipolar transistors under hot carrier stress

Gopi, P. K., Li, G. P., Sonek, G. J., Dunkley, J., Hannaman, D., Patterson, J., Willard, S.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 672 KB

english, 1993

13

Growth and characterization of serpentine superlattices in the GaSb-AlSb system

Wong, K. C., Krishnamurthy, Mohan, Brar, Berinder, Yi, Jong Chang, Kroemer, Herbert, English, John H.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 667 KB

english, 1993

14

Strain studies of silicon-germanium epilayers on silicon substrates using Raman spectroscopy

Lu, F., Perry, C. H., Namavar, F., Rowell, N. L., Soref, R. A.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 667 KB

english, 1993

15

Low temperature silicon epitaxy in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor using disilane

Sanganeria, Mahesh K., Violette, Katherine E., Öztürk, Mehmet C.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 706 KB

english, 1993

16

Semi-insulating nature of gas source molecular beam epitaxial InGaP grown at very low temperatures

Look, D. C., He, Y., Ramdani, J., El-Masry, N., Bedair, S. M.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 614 KB

english, 1993

17

Large diffusion length enhancement in silicon by rapid thermal codiffusion of phosphorus and aluminum

Hartiti, B., Slaoui, A., Muller, J. C., Siffert, P.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 622 KB

english, 1993

18

Enhanced giant magnetoresistance in Fe/Cr multilayer films by Cr alloying of the Fe layers

Chen, L. H., Tiefel, T. H., Jin, S., Van Dover, R. B., Gyorgy, E. M., Fleming, R. M.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 668 KB

english, 1993

19

Boron-implanted 6H-SiC diodes

Ghezzo, Mario, Brown, Dale M., Downey, Evan, Kretchmer, James, Kopanski, Joseph J.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 655 KB

english, 1993

20

Studies of dynamic magnetostriction by time-resolved scanning fiber interferometry

Freeman, M. R., Nunes, G.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 703 KB

english, 1993

21

Demonstration of Y1Ba2Cu3O7−δ and complementary metal-oxide-semiconductor device fabrication on the same sapphire substrate

Burns, M. J., de la Houssaye, P. R., Russell, S. D., Garcia, G. A., Clayton, S. R., Ruby, W. S., Lee, L. P.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 760 KB

english, 1993

22

Wavelength conversions ∼1.5 μm by difference frequency generation in periodically domain-inverted LiNbO3 channel waveguides

Xu, C. Q., Okayama, H., Shinozaki, K., Watanabe, K., Kawahara, M.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 535 KB

english, 1993

23

Aluminium layers as nonalloyed contacts to p-type GaAs

Ragay, F. W., Leys, M. R., Wolter, J. H.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 558 KB

english, 1993

24

Domain inversion in KTiOPO4 using electron beam scanning

Gupta, Mool C., Risk, W. P., Nutt, Alan C. G., Lau, S. D.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 541 KB

english, 1993

25

Addendum: ‘‘Electroabsorption in InGaAsP: Electro-optical modulators and bistable optical switches [Appl. Phys. Lett. 62, 2072 (1993)]

Knüpfer, B., Kiesel, P., Höfler, A., Riel, P., Döhler, G. H., Veuhoff, E.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 265 KB

english, 1993

26

New high-temperature superconducting phase spread alloy thin films

Lederman, D., Moran, T. J., Hasen, J., Schuller, Ivan K.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 530 KB

english, 1993

27

Erratum: ‘‘Microwave measurement of the dielectric constant of Sr0.5Ba0.5TiO3 ferroelectric thin films’’ [Appl. Phys. Lett. 62, 1845 (1993)]

Carroll, K. R., Pond, J. M., Chrisey, D. B., Horwitz, J. S., Leuchtner, R. E., Grabowski, K. S.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 267 KB

english, 1993

28

Investigation of the growth of gallium arsenide thin films by metalorganic molecular beam epitaxy using gallane-quinuclidine adduct

Foord, J. S., Whitaker, T. J., Downing, E. N., O’Hare, D., Jones, A. C.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 617 KB

english, 1993

29

Ferroelectricity in a Langmuir–Blodgett multilayer film of a liquid crystalline side-chain polymer

Pfeiffer, S., Shashidhar, R., Fare, T. L., Naciri, J., Adams, J., Duran, R. S.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 548 KB

english, 1993

30

Low temperature (313 °C) silicon epitaxial growth by plasma-enhanced chemical vapor deposition with stainless steel mesh

Shieh, Ming-Deng, Lee, Chiapyng, Chen, Cheng-Hsien, Yew, Tri-Rung, Kung, Chung-Yuan

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 712 KB

english, 1993

31

Photoelectric quantum yield of nanometer metal particles

Schleicher, B., Burtscher, H., Siegmann, H. C.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 509 KB

english, 1993

32

Laser operation-induced migration of beryllium at mirrors of GaAs/AlGaAs laser diodes

Jakubowicz, A., Oosenbrug, A., Forster, Th.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 673 KB

english, 1993

33

Visible light emission from a pn junction of porous silicon and microcrystalline silicon carbide

Futagi, Toshiro, Matsumoto, Takahiro, Katsuno, Masakazu, Ohta, Yasumitsu, Mimura, Hidenori, Kitamura, Koich

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 464 KB

english, 1993

34

In situ optical investigation of the etching process in the silicon HCl system

Ohshita, Y., Hosoi, N.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 477 KB

english, 1993

35

The process limitation for forming Ti silicided shallow junction by BF2+ implantation into thin polycrystalline Si films and subsequent Ti silicidation

Juang, M. H., Lin, C. T., Jan, S. T., Cheng, H. C.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 544 KB

english, 1993

36

Erratum: ‘‘Dependence of the optical properties of semiconductor alloys on the degree of long-range order’’ [Appl. Phys. Lett. 62, 1937 (1993)]

Wei, Su-Huai, Laks, David B., Zunger, Alex

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 227 KB

english, 1993

37

Anisotropic excitation spectra of GaAs/AlGaAs quantum wells grown on vicinal plane substrates

Wentink, D. J., Dawson, P., Foxon, C. T.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 556 KB

english, 1993

38

Evolution of monolayer terrace topography during metalorganic chemical vapor deposition of (100) GaAs

Epler, J. E., Schweizer, H. P.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 638 KB

english, 1993

39

Effect of ultraviolet irradiation upon the recombination lifetime of silicon wafers covered with a dielectric film

Zhong, L., Ando, K., Tsuya, H., Shimura, F.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 638 KB

english, 1993

40

Atomic-force-microscopic study of heteroepitaxial diamond nucleation on (100) silicon

Jiang, X., Schiffmann, K., Westphal, A., Klages, C.-P.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 679 KB

english, 1993

41

Erratum: ‘‘Group-velocity-matched second-harmonic generation: An efficient scheme for femtosecond ultraviolet pulse generation in periodically domain-inverted β-BaB2O4’’ [Appl. Phys. Lett. 62, 2188 (1993)]

Hayata, K., Koshiba, M.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 291 KB

english, 1993

42

Characterization of arsenic doping profile across the polycrystalline Si/Si interface in polycrystalline Si emitter bipolar transistors

Macaulay, J. M., Hull, R., Jalali, B., Magee, C.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 760 KB

english, 1993

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