A Study of the Schottky-Barrier Height of Nickel Germanosilicide Contacts Formed on $\hbox{Si}_{1-x}\hbox{Ge}_{x}$ Epilayer on Si Substrates
Tang, Mengrao, Li, Cheng, Wu, Zheng, Liu, Guanzhou, Huang, Wei, Lai, Hongkai, Chen, SongyanVolume:
59
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2012.2202287
Date:
September, 2012
File:
PDF, 602 KB
english, 2012