Electronic structure and deep impurity levels in [111]...

Journal of Applied Physics 1989 Vol. 65; Iss. 5

Electronic structure and deep impurity levels in [111] GaAs/AlxGa1−xAs semiconductor superlattices

Ren, Shang Yuan, Dow, John D.
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Volume:
65
Year:
1989
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.343418
File:
PDF, 1.23 MB
english, 1989
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