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Electron tunneling from the edge of thin single-crystal Si layers through SiO2 film
Ono, Yukinori, Takahashi, Yasuo, Horiguchi, Seiji, Murase, Katsumi, Tabe, MichiharuVolume:
80
Year:
1996
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.363406
File:
PDF, 544 KB
english, 1996