Effect of Asymmetric Channel on Charging Behavior of 22-nm...

IEEE Transactions on Electron Devices 2012 / 09 Vol. 59; Iss. 9

Effect of Asymmetric Channel on Charging Behavior of 22-nm Quantum-Dot Floating-Gate Flash Memory Cell

Shrirao, Ashwini, Gautam, Rashmi, Patrikar, Rajendra M.
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Volume:
59
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2012.2204999
Date:
September, 2012
File:
PDF, 259 KB
english, 2012
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