Modeling Non-Quasi-Static Effects in SiGe HBTs Using...

IEEE Transactions on Electron Devices 2012 / 09 Vol. 59; Iss. 9

Modeling Non-Quasi-Static Effects in SiGe HBTs Using Improved Charge Partitioning Scheme

Augustine, Noel, Kumar, Khamesh, Bhattacharyya, Arkaprava, Zimmer, Thomas, Chakravorty, Anjan
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Volume:
59
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2012.2202236
Date:
September, 2012
File:
PDF, 410 KB
english, 2012
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