Positive Bias Instability and Recovery in InGaAs Channel...

IEEE Transactions on Device and Materials Reliability 2013 / 12 Vol. 13; Iss. 4

Positive Bias Instability and Recovery in InGaAs Channel nMOSFETs

Deora, S., Bersuker, G., Loh, W.-Y., Veksler, D., Matthews, K., Kim, T. W., Lee, R. T. P., Hill, R. J. W., Kim, D.-H., Wang, W.-E., Hobbs, C., Kirsch, P. D.
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Volume:
13
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/tdmr.2013.2284376
Date:
December, 2013
File:
PDF, 1.97 MB
english, 2013
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