IEEE Transactions on Device and Materials Reliability

1

Performance and Variability Studies of InGaAs Gate-all-Around Nanowire MOSFETs

Conrad, Nathan, Shin, SangHong, Gu, Jiangjiang, Si, Mengwei, Wu, Heng, Masuduzzaman, Muhammad, Alam, Mohammad A., Ye, Peide D.

Journal:

Year:

2013

Language:

english

File:

PDF, 891 KB

english, 2013

2

Electrical Characterization of Gate Traps in FETs With Ge and III–V Channels

Sun, Xiao, Ma, T. P.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2013

Language:

english

File:

PDF, 2.59 MB

english, 2013

3

First Reliability Demonstration of Sub-200-nm AlN/GaN-on-Silicon Double-Heterostructure HEMTs for Ka-Band Applications

Meneghesso, Gaudenzio, Meneghini, Matteo, Medjdoub, Farid, Tagro, Yoann, Grimbert, Bertrand, Ducatteau, Damien, Rolland, Nathalie, Silvestri, Riccardo, Zanoni, Enrico

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2013

Language:

english

File:

PDF, 1.17 MB

english, 2013

4

Border Traps in Ge/III–V Channel Devices: Analysis and Reliability Aspects

Simoen, Eddy, Lin, Dennis Han-Chung, Alian, A., Brammertz, G., Merckling, C., Mitard, J., Claeys, Cor

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2013

Language:

english

File:

PDF, 1.02 MB

english, 2013

5

Reliability of High-Mobility InGaAs Channel n-MOSFETs Under BTI Stress

Li, Ming-Fu, Jiao, Guangfan, Hu, Yaodong, Xuan, Yi, Huang, Daming, Ye, Peide D.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2013

Language:

english

File:

PDF, 1.41 MB

english, 2013

6

The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{InGaAs}$ MOS System

Hurley, P. K., O'Connor, Eamon, Djara, V., Monaghan, S., Povey, I. M., Long, R. D., Sheehan, B., Lin, J., McIntyre, P. C., Brennan, B., Wallace, R. M., Pemble, M. E., Cherkaoui, K.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2013

Language:

english

File:

PDF, 1.29 MB

english, 2013

7

NBTI Reliability of SiGe and Ge Channel pMOSFETs With $ \hbox{SiO}_{2}/\hbox{HfO}_{2}$ Dielectric Stack

Franco, Jacopo, Kaczer, Ben, Mitard, Jerome, Toledano-Luque, Maria, Roussel, Philippe J., Witters, Liesbeth, Grasser, Tibor, Groeseneken, Guido

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2013

Language:

english

File:

PDF, 1.74 MB

english, 2013

8

Gate Stack Reliability of MOSFETs With High-Mobility Channel Materials: Bias Temperature Instability

Gong, Xiao, Liu, Bin, Yeo, Yee-Chia

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2013

Language:

english

File:

PDF, 1.23 MB

english, 2013

9

Positive Bias Instability and Recovery in InGaAs Channel nMOSFETs

Deora, S., Bersuker, G., Loh, W.-Y., Veksler, D., Matthews, K., Kim, T. W., Lee, R. T. P., Hill, R. J. W., Kim, D.-H., Wang, W.-E., Hobbs, C., Kirsch, P. D.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2013

Language:

english

File:

PDF, 1.97 MB

english, 2013

10

Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in $\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As}$ Metal–Oxide–Semiconductor Field Effect Transistors

Taoka, Noriyuki, Yokoyama, Masafumi, Kim, Sang Hyeon, Suzuki, Rena, Lee, Sunghoon, Iida, Ryo, Hoshii, Takuya, Jevasuwan, Wipakorn, Maeda, Tatsuro, Yasuda, Tetsuji, Ichikawa, Osamu, Fukuhara, Noboru, H

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2013

Language:

english

File:

PDF, 748 KB

english, 2013

11

Kudos to our reviewers

Oates, Anthony S.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2013

Language:

english

File:

PDF, 21 KB

english, 2013

12

Forward to the Special Section on “Reliability of High-Mobility Channel Materials”

Crupi, Felice, Kaczer, Ben, Takagi, Shinichi

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2013

Language:

english

File:

PDF, 35 KB

english, 2013

13