Effect of bias on thermally stimulated current (TSC) in irradiated MOS devices
Fleetwood, D.M., Reber, R.A., Winokur, P.S.Volume:
38
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/23.124076
Date:
January, 1991
File:
PDF, 1.26 MB
english, 1991