WSiN/SiO2 capped annealing for Si-implanted GaAs
Tamura, Akiyoshi, Ikeda, Yoshito, Yokoyama, Takahiro, Inoue, KaoruVolume:
67
Year:
1990
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.345180
File:
PDF, 637 KB
english, 1990