Volume 67; Issue 10

Main
Journal of Applied Physics
Volume 67; Issue 10

Journal of Applied Physics

Volume 67; Issue 10

1

X‐ray interferometry and its application to determination of layer thickness and strain in quantum‐well structures

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1.25 MB

english, 1990

2

Frequencies of confined longitudinal‐optical phonon modes in GaAs/GaP short‐period strained‐layer superlattices

Kim, K. W., Stroscio, M. A., Hall, J. C.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 786 KB

english, 1990

3

The quantum transmitting boundary method

Lent, Craig S., Kirkner, David J.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 904 KB

english, 1990

4

A new type of high efficiency with a low‐cost solar cell having the structure of a μc‐SiC/polycrystalline silicon heterojunction

Matsumoto, Y., Hirata, G., Takakura, H., Okamoto, H., Hamakawa, Y.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 905 KB

english, 1990

5

Extended Goodman model for series resistance masking on bulky semiconductor junction capacitance

Chan, C. L., Shih, I.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 621 KB

english, 1990

6

Methyl radical and H-atom concentrations during diamond growth

Harris, Stephen J., Weiner, Anita M.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 982 KB

english, 1990

7

Evanescent wave absorption spectroscopy using multimode fibers

Ruddy, V., MacCraith, B. D., Murphy, J. A.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 727 KB

english, 1990

8

Effect of laser-irradiation on structural and electrical properties of CdS thin films

Dawar, A. L., Shishodia, P. K., Chauhan, Gayatri, Kumar, Anil, Mathur, P. C.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 700 KB

english, 1990

9

Interaction between a sheet source and a moving compressible plasma

Nakagawa, Kimio

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 732 KB

english, 1990

10

A comparison of the reaction of titanium with amorphous and monocrystalline silicon

Raaijmakers, Ivo J. M. M., Kim, Ki-Bum

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1.65 MB

english, 1990

11

Some properties of the circular waveguide with azimuthally magnetized ferrite

Ivanov, Kamen P., Georgiev, Georgi N.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1.29 MB

english, 1990

12

Temperature dependence of the fundamental absorption edge of mercury cadmium telluride

Laurenti, J. P., Camassel, J., Bouhemadou, A., Toulouse, B., Legros, R., Lusson, A.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 962 KB

english, 1990

13

Optical dispersion relations for AlSb from E=0 to 6.0 eV

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 776 KB

english, 1990

14

Control of plasma parameters and electric fields in a microwave-rf hybrid plasma

Fujita, Hiroharu, Okuno, Yoshihiro, Ohtsu, Yasunori, Yagura, Shinya

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 608 KB

english, 1990

15

Island growth and coarsening in thin films—conservative and nonconservative systems

Atwater, Harry A., Yang, Chih M.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1.27 MB

english, 1990

16

The role of hydrogen in diamond synthesis using a microwave plasma in a CO/H2 system

Muranaka, Yasushi, Yamashita, Hisao, Sato, Kouji, Miyadera, Hiroshi

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1.03 MB

english, 1990

17

A theoretical study of the hyperbolic electron mirror as a correcting element for spherical and chromatic aberration in electron optics

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1.82 MB

english, 1990

18

Effects of C+ implantation on the interdiffusion and resistivity of Cu/Ni/Au thin films

Madakson, Peter, Karasinski, J.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 740 KB

english, 1990

19

A model for resonant and sequential tunneling in the presence of scattering

Khondker, A. N.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 779 KB

english, 1990

20

Particulates in aluminum sputtering discharges

Jellum, G. M., Graves, D. B.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 959 KB

english, 1990

21

Analysis of multilayer thin-film structures containing magneto-optic and anisotropic media at oblique incidence using 2×2 matrices

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1.13 MB

english, 1990

22

A temperature-independent capacitance in semiconductor-insulator-semiconductor capacitors

Hickmott, T. W., Solomon, P. M.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 699 KB

english, 1990

23

Structural properties of (100) BaF2 on (100) InP grown by in situ rapid isothermal processing

Singh, R., Thakur, R. P. S., Kumar, A., Chou, P., Narayan, J.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 716 KB

english, 1990

24

Deep level spectroscopy in p-GaSe single crystals

Micocci, G., Siciliano, P., Tepore, A.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 412 KB

english, 1990

25

Thermally induced optical bistability and self-oscillation in a nonlinear etalon filled with optical adhesive

Kong, Hong Jin, Hwang, Wol Yon

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 660 KB

english, 1990

26

Ion beam sputtering of in situ superconducting Y-Ba-Cu-O films

Klein, J. D., Yen, A., Clauson, S. L.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 875 KB

english, 1990

27

Vacancy-type defects in Si+ -implanted GaAs and its effects on electrical activation by rapid thermal annealing

Lee, Jong-Lam, Uedono, Akira, Tanigawa, Shoichro, Lee, Jeong Yong

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1.07 MB

english, 1990

28

MeV Be implantation in GaAs

Rao, Mulpuri V., Thompson, Phillip E., Dietrich, Harry B., Simons, David S.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 828 KB

english, 1990

29

Cleavage energies in semiconductors

Berding, M. A., Krishnamurthy, Srinivasan, Sher, A., Chen, A.-B.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 679 KB

english, 1990

30

Voltage ramp breakdown analysis of thick plasma-deposited Si3N4 metal-insulator-metal capacitors

Sterrett, James E.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1.47 MB

english, 1990

31

Solving electromagnetic scattering problems at resonance frequencies

Murphy, W. D., Rokhlin, V., Vassiliou, M. S.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 800 KB

english, 1990

32

Gain enhancement in a free electron laser by two-stream instability

Botton, Mordechai, Ron, Amiram

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 579 KB

english, 1990

33

Effect of third-element additions on properties of Co-Cr-based films

Sagoi, Masayuki, Inoue, Tetsuo

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 784 KB

english, 1990

34

On-wafer correlation between total EL2 concentration, shallow acceptor concentration, and Hall properties in semi-insulating GaAs

Brierley, Steven K., Hendriks, Henry T.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 539 KB

english, 1990

35

Spin-polarized scanning tunneling microscope: Concept, design, and preliminary results from a prototype operated in air

Johnson, Mark, Clarke, John

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1.76 MB

english, 1990

36

Growth and properties of thin GaAs epitaxial layers on Al2O3

Kuech, T. F., Segmüller, A., Kuan, T. S., Goorsky, M. S.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1.70 MB

english, 1990

37

Change in the optical-absorption coefficient induced by optical modulation of the internal electric field in doping-modulated amorphous silicon multilayers

Oheda, Hidetoshi

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 790 KB

english, 1990

38

Photoluminescence from ultrashort-period AlAs-GaAs atomic-layer superlattices

Toriyama, Takeshi, Kobayashi, Naoki, Horikoshi, Yoshiji

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 712 KB

english, 1990

39

Controlled doping of GaAs films grown with tertiarybutylarsine

Lum, R. M., Klingert, J. K., Stevie, F. A.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 884 KB

english, 1990

40

Hydrogen incorporation scheme in hydrogenated amorphous silicon/silicon carbon multilayers

Yoshimoto, Masahiro, Matsunami, Hiroyuki

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 856 KB

english, 1990

41

SiO diffusion during thermal decomposition of SiO2

Sasse, H.-E., König, U.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 558 KB

english, 1990

42

Outdiffusion of Be during rapid thermal annealing of high-dose Be-implanted GaAs

Baratte, H., Sadana, D. K., de Souza, J. P., Hallali, P. E., Schad, R. G., Norcott, M., Cardone, F.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 577 KB

english, 1990

43

Reaction between Cu and PtSi with Cr, Ti, W, and C barrier layers

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 800 KB

english, 1990

44

Role of recoil implanted oxygen in determining boron diffusion in silicon

Fan, D., Jaccodine, R. J.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 910 KB

english, 1990

45

A theory of weak transient electrical discharges on dielectric surfaces

Kadish, A., Maier II, William B., Robiscoe, R. T.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1013 KB

english, 1990

46

Electric-field-induced absorption changes in triangular quantum wells grown by pulsed-beam molecular-beam-epitaxy technique

Law, K-K., Yan, R. H., Gossard, A. C., Merz, J. L.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 863 KB

english, 1990

47

Simple analytic potentials for linear ion traps

Janik, G. R., Prestage, J. D., Maleki, L.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 844 KB

english, 1990

48

Rapid thermal processing of YBa2Cu3O7 spun wires

Ginley, D. S., Venturini, E. L., Kwak, J. F., Mitchell, M. A., Morosin, B., Baughman, R. J., Halloran, J. W., Neal, M. J.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1.14 MB

english, 1990

49

Fractal-like Si crystallization during interfacial reactions in thin Al/amorphous SiC layers

Nathan, M., Ahearn, J. S.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 714 KB

english, 1990

50

An annealing study of strain relaxation and dislocation generation in Si1−xGex/Si heteroepitaxy

Timbrell, P. Y., Baribeau, J.-M., Lockwood, D. J., McCaffrey, J. P.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1.47 MB

english, 1990

51

Dielectric relaxation functions and models

Gross, Bernhard

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 908 KB

english, 1990

52

Some optical and electron microscope comparative studies of excimer laser-assisted and nonassisted molecular-beam epitaxically grown thin GaAs films on Si

Lao, Pudong, Tang, Wade C., Rajkumar, K. C., Guha, S., Madhukar, A., Liu, J. K., Grunthaner, F. J.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1.37 MB

english, 1990

53

The theory of the photoconductance under the presence of a small photocarrier grating

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 887 KB

english, 1990

54

Electronic stopping-power calculations for heavy ions in semiconductors

Elkomoss, S. G., Pape, A., Unamuno, S.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 618 KB

english, 1990

55

Excimer laser induced doping of phosphorus into silicon

Slaoui, A., Foulon, F., Siffert, P.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 869 KB

english, 1990

56

Very-low-pressure deposition by electron cyclotron resonance plasma chemical vapor deposition method

Shirai, Koun, Gonda, Shun-ichi

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 859 KB

english, 1990

57

WSiN/SiO2 capped annealing for Si-implanted GaAs

Tamura, Akiyoshi, Ikeda, Yoshito, Yokoyama, Takahiro, Inoue, Kaoru

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 637 KB

english, 1990

58

Spatially resolved space-charge density in the hydrogenated amorphous silicon Schottky barrier from surface photovoltage measurements

Ukah, C. I., Perz, J. M., Zukotynski, S.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 682 KB

english, 1990

59

Sub-band-gap superconductor absorption in Bardeen–Cooper–Schrieffer framework using the Mattis–Bardeen approach

Goossen, K. W., Nuss, M. C.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 580 KB

english, 1990

60

Probe determination of the electron energy distribution in a Hg-Ar low-pressure positive column

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 764 KB

english, 1990

61

Comparison of infrared upconversion methods for photon-limited imaging

Watson, Edward A., Morris, G. Michael

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1.33 MB

english, 1990

62

Formation and high-temperature stability of CoSix films on an SiO2 substrate

Morgan, A. E., Ritz, K. N., Broadbent, E. K., Bhansali, A. S.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 723 KB

english, 1990

63

Surface reaction probability of film-producing radicals in silane glow discharges

Doughty, D. A., Doyle, J. R., Lin, G. H., Gallagher, A.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1.33 MB

english, 1990

64

Steady-state temperature of an evaporating water droplet with a monolayer coating

Rubel, Glenn O.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 618 KB

english, 1990

65

Trap emission rates in GaAs in the presence of surface acoustic waves

Janes, D., Hoskins, M. J.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1.14 MB

english, 1990

66

KrF/H2 Raman conversion at high repetition rate using a hydrogen gas circulating system

Lou, Qihong, Yagi, Takashi, Saito, Hideaki

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 579 KB

english, 1990

67

Hall measurements as a function of temperature on monocrystalline SiC thin films

Tachibana, T., Kong, H. S., Wang, Y. C., Davis, R. F.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1.08 MB

english, 1990

68

Pulse response characteristics of ZnO varistors

Modine, F. A., Wheeler, R. B.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1.04 MB

english, 1990

69

Resonant optical absorption by discontinuous transparent overlayers on gold surfaces

Truong, Vo-Van, Ashrit, P. V., Bader, G., Girouard, Fernand E., Yamaguchi, Tomuo

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 466 KB

english, 1990

70

Charge-transfer collisions between He+2 ions and N2: Branching ratio into vibrational states

Kirkici, H., Bruno, D., Preiss, J., Schaefer, G.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 627 KB

english, 1990

71

X-ray topographic investigation of characteristic dislocation structure in sapphire single crystals

Qiang, Zhang, Peizhen, Deng, Fuxi, Gan

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1.16 MB

english, 1990

72

Characterization of hydrogenated amorphous boron films prepared by electron cyclotron resonance plasma chemical vapor deposition method

Shirai, Koun, Gonda, Shun-ichi

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 983 KB

english, 1990

73

Pressure-induced resonance Raman scattering in Ga1−xInxAs/Ga1−yAlyAs strained quantum-well structures

Kourouklis, G. A., Jayaraman, A., People, R., Sputz, S. K., Maines, R. G., Sivco, D. L., Cho, A. Y.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 956 KB

english, 1990

74

Effects of finite radial geometry on free-electron-laser instability with a longitudinal wiggler field

Mishra, G., Tripathi, V. K.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 719 KB

english, 1990

75

Characterization of the EL2 center in GaAs by optical admittance spectroscopy

Dueñas, S., Castán, E., de Dios, A., Bailón, L., Barbolla, J., Pérez, A.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 961 KB

english, 1990

76

Bounds on the effective properties of polydispersed suspensions of spheres: An evaluation of two relevant morphological parameters

Thovert, J. F., Kim, I. C., Torquato, S., Acrivos, A.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1.31 MB

english, 1990

77

Dependence of H− production upon the work function of a Mo surface in a cesiated hydrogen discharge

Wada, M., Pyle, R. V., Stearns, J. W.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 939 KB

english, 1990

78

Effects of etching with a mixture of HCl gas and H2 on the GaAs surface cleaning in molecular-beam epitaxy

Saito, Junji, Kondo, Kazuo

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1.04 MB

english, 1990

79

Solid phase reaction of molybdenum-nickel alloy thin films with silicon

Rastogi, R. S., Vankar, V. D., Chopra, K. L.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 732 KB

english, 1990

80

Theoretical and experimental study of the longitudinal uniaxial stress dependence of I-V characteristics in GaAs-AlxGa1−xAs-GaAs heterojunction barriers

Lu, S. S., Lee, K. R., Lee, K. H., Nathan, M. I., Heiblum, M., Wright, S. L.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1.08 MB

english, 1990

81

Unsteady adiabatic isentropic expansion of gas into vacuum from a toroidal puff valve

Pedrow, Patrick D., Nasiruddin, Abutaher M., Mahalingam, R.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 691 KB

english, 1990

82

Dielectric and pyroelectric properties of the morphotropic phase boundary lead barium niobate (PBN) single crystals at low temperature (10–300 K)

Guo, R., Bhalla, A. S., Randall, C. A., Cross, L. E.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 865 KB

english, 1990

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