Influence of substrate-boron concentration on the residual...

Journal of Applied Physics 1996 Vol. 80; Iss. 3

Influence of substrate-boron concentration on the residual end-of-range defects in 450 °C annealed As+-implanted junctions

Nakada, Akira, Massazumi Oka, Mauricio, Tamai, Yukio, Shibata, Tadashi, Ohmi, Tadahiro
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Volume:
80
Year:
1996
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.362956
File:
PDF, 384 KB
english, 1996
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