Volume 80; Issue 3

Main
Journal of Applied Physics
Volume 80; Issue 3

Journal of Applied Physics

Volume 80; Issue 3

1

Nanocrystalline FeNdB permanent magnets with enhanced remanence

Bauer, J., Seeger, M., Zern, A., Kronmuller, H.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 1.16 MB

english, 1996

2

On Hall scattering factors for holes in GaAs

Look, D. C., Stutz, C. E., Sizelove, J. R., Evans, K. R.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 294 KB

english, 1996

3

Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

Takagi, Shin‐ichi, Hoyt, Judy L., Welser, Jeffrey J., Gibbons, James F.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 461 KB

english, 1996

4

N incorporation in InP and band gap bowing of InNxP1âx

Bi, W. G., Tu, C. W.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 318 KB

english, 1996

5

Different reaction mechanisms during mechanical alloying Ti50C50 and Ti33B67

Ye, L. L., Liu, Z. G., Quan, M. X., Hu, Z. Q.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 318 KB

english, 1996

6

Deep center luminescence in p-type CdTe

Krustok, J., Valdna, V., Hjelt, K., Collan, H.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 367 KB

english, 1996

7

Comment on ââLine shape, line width, and configuration coordinate diagram of the Cu band (1.21 eV) in InPââ [J. Appl. Phys. 78, 5206 (1995)]

Collan, H. K., Krustok, J.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 311 KB

english, 1996

8

Proton-implantation-induced nanosized Ge crystal formation in SiO2:GeO2 glasses

Kawamura, Ken-ichi, Hosono, Hideo, Kawazoe, Hiroshi

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 450 KB

english, 1996

9

A three-dimensional model for inductively coupled plasma etching reactors: Azimuthal symmetry, coil properties, and comparison to experiments

Kushner, Mark J., Collison, Wenli Z., Grapperhaus, Michael J., Holland, John P., Barnes, Michael S.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 473 KB

english, 1996

10

Ion energy and angular distributions in inductively coupled radio frequency discharges in argon

Woodworth, Joseph R., Riley, Merle E., Meister, Dorothy C., Aragon, Ben P., Le, Minh S., Sawin, Herbert H.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 354 KB

english, 1996

11

Comparison of collision rates in particle-in-cell, Monte Carlo, and Boltzmann codes

Verboncoeur, J. P., Parker, G. J., Penetrante, B. M., Morgan, W. L.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 302 KB

english, 1996

12

Effective dielectric constant of periodic composite materials

Sareni, B., KraÌhenbuÌhl, L., Beroual, A., Brosseau, C.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 390 KB

english, 1996

13

Characterization of lattice spacing and inclination around cells in liquid-encapsulated Czochralski GaAs crystals using a 100×100 μm2 incident x-ray beam

Usuda, K., Ando, M.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 1.65 MB

english, 1996

14

Growth of apatite films by laser ablation: Reduction of the droplet areal density

Guillot-Noël, O., Gomez-San Roman, R., Perrière, J., Hermann, Jörg, Craciun, Valentin, Boulmer-Leborgne, Chantal, Barboux, P.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 416 KB

english, 1996

15

Electrode effects in positive temperature coefficient and negative temperature coefficient devices measured by complex-plane impedance analysis

Cann, D. P., Randall, C. A.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 392 KB

english, 1996

16

Initial phase formation in Nb/Si multilayers deposited at different temperatures

Zhang, Ming, Yu, Wen, Wang, W. H., Wang, W. K.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 746 KB

english, 1996

17

Modeling and control of an electric arc furnace using a feedforward artificial neural network

King, P. E., Nyman, M. D.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 345 KB

english, 1996

18

Surface hardness enhancement in ion-implanted amorphous carbon

Lee, D. H., Park, B., Poker, D. B., Riester, L., Feng, Z. C., Baglin, J. E. E.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 329 KB

english, 1996

19

Two-dimensional device modeling and analysis of GaInAs metal–semiconductor–metal photodiode structures

Averin, S., Sachot, R., Hugi, J., de Fays, M., Ilegems, M.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 350 KB

english, 1996

20

Microcavity effect in the optical intersubband absorption of a multiple-quantum-well structure

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 321 KB

english, 1996

21

Valence intersubband transitions stimulated by polarized light in Si1−xGex/Si multiple quantum wells

Zhang, Xinhui, Chen, Zhenghao, Cui, Dafu, Zhou, Junming, Yang, Guozhen

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 341 KB

english, 1996

22

Electron spin resonance studies in β-FeSi2 crystals

Aksenov, I., Katsumata, H., Makita, Y., Kimura, Y., Shinzato, T., Sato, K.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 331 KB

english, 1996

23

Free to bound transition-related electroluminescence in 3C and 6H SiC p+–n junctions at room temperature

Yoganathan, M., Choyke, W. J., Devaty, R. P., Neudeck, P. G.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 375 KB

english, 1996

24

Properties of niobium–titanium superconducting wires with Nb artificial pinning centers

Heussner, R. W., Nunes, C. Bormio, Lee, P. J., Larbalestier, D. C., Jablonski, P. D.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 601 KB

english, 1996

25

Structural analysis of AlN and (Ti1−XAlX)N coatings made by plasma enhanced chemical vapor deposition

Lee, Sang-Hyeob, Kim, Byoung-June, Kim, Hyung-Hwan, Lee, Jung-Joong

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 2.07 MB

english, 1996

26

Electron acoustic imaging of BaTiO3 single crystals

Zhang, B. Y., Jiang, F. M., Yang, Y., Yin, Q. R., Kojima, S.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 509 KB

english, 1996

27

Erratum: ‘‘Nitridation process of sapphirre substrate surface and its effect on the growth of GaN’’ [J. Appl. Phys. 79, 3487 (1996)]

Uchida, K., Watanabe, A., Yano, F., Kouguchi, M., Tanaka, T., Minagawa, S.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 247 KB

english, 1996

28

Vibrational local modes of a-Si1−xCx:H alloys and variation of local modes in different local environments

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 344 KB

english, 1996

29

A multicomponent, multitemperature model for high density plasma processing reactors

Meyyappan, M., Govindan, T. R.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 372 KB

english, 1996

30

Unified two-dimensional model for grating dynamics in photorefractive materials

Solymar, L., Aguilar, María, Agulló-López, F.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 369 KB

english, 1996

31

Optical spectroscopy of plasma produced by laser ablation of Ti alloy in air

Wang, X. T., Man, B. Y., Wang, G. T., Zhao, Z., Liao, Y., Xu, B. Z., Xia, Y. Y., Mei, L. M., Hu, X. Y.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 354 KB

english, 1996

32

Addendum: Direct calculation of two-dimensional collection probability in pn junction solar cells, and study of grain boundary recombination in polycrystalline silicon cells [J. Appl. Phys. 79, 2103 (1996)]

Al-Omar, Abdul-Azeez S., Ghannam, Moustafa Y.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 243 KB

english, 1996

33

Stability of Zn doping profile in modulation-doped multiple quantum well structure

Otsuka, Nobuyuki, Ishino, Masato, Matsui, Yasushi

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 439 KB

english, 1996

34

Monte Carlo particle simulation of a quantum well heterojunction field-effect transistor: Comparison with experimental data

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 379 KB

english, 1996

35

Kinetics of evaporation of beaded Ag film on sapphire and on alumina scale

Erdélyi, G., Barkóczi, M., Moya, E., Giordano, H., Beszeda, I., Aufray, B., Beke, D. L.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 779 KB

english, 1996

36

Erratum: ‘‘Maximally efficient permanent magnet structures’’ [J. Appl. Phys. 79, 1157 (1996)]

Jensen, J. H., Abele, M. G.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 269 KB

english, 1996

37

Effects of hydrogen and rf power on the structural and electrical properties of rf sputtered hydrogenated amorphous silicon carbide films

Choi, W. K., Loo, F. L., Loh, F. C., Tan, K. L.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 389 KB

english, 1996

38

Valence-band mixing effects on exciton dipole terahertz emission from asymmetric triple quantum wells

Hernández-Cabrera, A., Ramos, A.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 418 KB

english, 1996

39

The dc magnetization of YBa[sub 2]Cu[sub 3]O[sub 7−δ] /Ag bulk composites

Ash, C. L., Harris, D. C., Hebboul, S. E., Garland, J. C., Almasan, C. C.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 400 KB

english, 1996

40

Al composition dependence of Schottky barrier heights and conduction band offsets of AlxIn1−xP/Ga0.47In0.53As on InP

Zhu, Yu, Ishimaru, Yoshiteru, Takahashi, Naoki, Shimizu, Masafumi

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 412 KB

english, 1996

41

Determination of a set of electron impact cross sections in tetrafluoromethane consistent with experimental determination of swarm parameters

Bordage, M. C., Ségur, P., Chouki, A.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 529 KB

english, 1996

42

Photoluminescence and intersubband absorption spectroscopy of interdiffused Si/SiGe quantum wells

Boucaud, P., Wu, L., Guedj, C., Julien, F. H., Sajnes, I., Campidelli, Y., Garchery, L.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 405 KB

english, 1996

43

State coupling effects in GaAs/InGaAs/AlGaAs modulation doped quantum wells

Abbade, M. L. F., Iikawa, F., Brum, J. A., Tröster, Th., Bernussi, A. A., Pereira, R. G., Borghs, G.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 313 KB

english, 1996

44

Transport in extrinsic photoconductors: A comprehensive model for transient response

Haegel, N. M., Brennan, C. R., White, A. Michael

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 389 KB

english, 1996

45

Fast and slow current tuning of lead-chalcogenide diode lasers

Kastner, J. F., Richter, G., Herrmann, C., Tacke, M.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 359 KB

english, 1996

46

Influence of substrate-boron concentration on the residual end-of-range defects in 450 °C annealed As+-implanted junctions

Nakada, Akira, Massazumi Oka, Mauricio, Tamai, Yukio, Shibata, Tadashi, Ohmi, Tadahiro

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 384 KB

english, 1996

47

Reply to ‘‘Comments on ‘Line shape, line width, and configuration coordinate diagram of the Cu band (1.21 eV) in InP’ ’’ [J. Appl. Phys. 80, 1937 (1996)]

Pal, D., Bose, D. N.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 286 KB

english, 1996

48

Thermal evolution of carbon in annealed Co/C soft x-ray multilayers

Bai, H. L., Jiang, E. Y., Wang, C. D., Sun, D. C.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 598 KB

english, 1996

49

Hydrogen passivation of iron-related hole traps in silicon

Kouketsu, Masami, Isomae, Seiichi

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 321 KB

english, 1996

50

Structural modification of ion-implanted and postannealed polycrystalline diamond studied by transmission electron microscopy

Jiang, N., Yagyu, H., Deguchi, M., Won, J. H., Mori, Y., Hatta, A., Kitabatake, M., Ito, T., Hirao, T., Sasaki, T., Hiraki, A.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 659 KB

english, 1996

51

Donor formation in nitrogen doped silicon

Yang, Deren, Fan, Ruixing, Li, Liben, Que, Duanlin, Sumino, Koji

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 340 KB

english, 1996

52

Electron and phonon thermal waves in semiconductors: An application to photothermal effects

González de la Cruz, G., Gurevich, Yu. G.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 371 KB

english, 1996

53

Thermodynamic analysis of two-dimensional crystal growth in nucleated isotactic polypropylene

Pieruccini, M., Marco, G. Di, Lanza, M.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 372 KB

english, 1996

54

Electrical properties in arsenic-ion-implanted GaAs

Chen, Wen-Chung, Chang, C.-S.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 351 KB

english, 1996

55

Electron transverse energy distribution in GaAs negative electron affinity cathodes: Calculations compared to experiments

Vergara, G., Herrera-Gómez, A., Spicer, W. E.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 447 KB

english, 1996

56

Study of high-field electron transport in semiconductors using balance equations for nonparabolic multivalley systems

Lei, X. L., Cao, J. C., Dong, B.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 405 KB

english, 1996

57

InP/GaAs self-assembled nanostructures: Modelization and experiment

Berti, M., Drigo, A. V., Giuliani, A., Mazzer, M., Camporese, A., Rossetto, G., Torzo, G.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 446 KB

english, 1996

58

Determination of beam affected area and degradation of cathodoluminescence in GaAs induced by focused ion beam irradiation

Furuya, Kazuo, Saito, Tetsuya

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 603 KB

english, 1996

59

Electrical resistivity of single-crystal Al2O3 shock-compressed in the pressure range 91–220 GPa (0.91–2.20 Mbar)

Weir, S. T., Mitchell, A. C., Nellis, W. J.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 348 KB

english, 1996

60

Disordered oxygen octahedral rotations and glasslike polarization characteristics in rhombohedral lead zirconate titanate

Dai, Xunhu, Xu, Z., Viehland, Dwight

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 363 KB

english, 1996

61

Interface state-induced shift of the oxide and semiconductor core levels for metal–oxide–semiconductor devices

Kobayashi, H., Namba, K., Yamashita, Y., Nakato, Y., Komeda, T., Nishioka, Y.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 390 KB

english, 1996

62

Diagnostics of the magnetized low-pressure hydrogen plasma jet: Molecular regime

Qing, Zhou, Otorbaev, D. K., Brussaard, G. J. H., van de Sanden, M. C. M., Schram, D. C.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 528 KB

english, 1996

63

Optical properties of GaSb alloys and photodiodes grown by liquid-phase epitaxy

Sun, Yuh-Maoh, Jiang, Wen-Jang, Wu, Meng-Chyi

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 351 KB

english, 1996

64

Initial stages of GaN/GaAs(100) growth by metalorganic chemical vapor deposition

Wang, Kun, Pavlidis, Dimitris, Singh, Jasprit

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 1.17 MB

english, 1996

65

Temperature distributions and their evolution in non-planar energy beam microprocessing: A fast algorithm

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 425 KB

english, 1996

66

Stresses, curvatures, and shape changes arising from patterned lines on silicon wafers

Shen, Y.-L., Suresh, S., Blech, I. A.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 4.36 MB

english, 1996

67

Initial growth studies of silicon oxynitrides in a N2O environment

Tang, H. T., Lennard, W. N., Zhang, C. S., Griffiths, K., Li, B., Feldman, L. C., Green, M. L.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 400 KB

english, 1996

68

Study of the orientational relaxation dynamics in a nonlinear optical copolymer by means of a pole and probe technique

Michelotti, F., Toussaere, E., Levenson, R., Liang, J., Zyss, J.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 381 KB

english, 1996

69

The effect of anisotropic flux pinning microstructure on the sample length dependence of the magnetization critical current density in niobium–titanium superconductors

C. B. Nunes, R. W. Heussner, D. C. Larbalestier

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 345 KB

english, 1996

70

Dielectric function and reflectivity of 3C–silicon carbide and the component perpendicular to the c axis of 6H–silicon carbide in the energy region 1.5–9.5 eV

S. Logothetidis, J. Petalas

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 469 KB

english, 1996

71

Carrier dynamics in oxidized porous silicon

Komuro, Shuji, Kato, Takashi, Morikawa, Takitaro, O’Keeffe, Patrick, Aoyagi, Yoshinobu

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 501 KB

english, 1996

72

Spectral emissivities in the visible and infrared of liquid Zr, Ni, and nickel-based binary alloys

Krishnan, Shankar, Nordine, Paul C.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 474 KB

english, 1996