An investigation of the diffusion of silicon in delta-doped gallium arsenide, as determined using high-resolution secondary ion mass spectrometry
Nutt, H. C., Smith, R. S., Towers, M., Rees, P. K., James, D. J.Volume:
70
Year:
1991
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.349640
File:
PDF, 944 KB
english, 1991