Volume 70; Issue 2

Journal of Applied Physics

Volume 70; Issue 2
1

Improved value for the silicon intrinsic carrier concentration from 275 to 375 K

Year:
1991
Language:
english
File:
PDF, 1.39 MB
english, 1991
10

The optical properties of AlGaAs/GaAs hyperbolic quantum-well structures

Year:
1991
Language:
english
File:
PDF, 616 KB
english, 1991
16

Ion exchange of Rb, Ba, and Sr in KTiOPO4

Year:
1991
Language:
english
File:
PDF, 1.30 MB
english, 1991
18

A model for the degradation of Ga(Al)As single-quantum-well lasers

Year:
1991
Language:
english
File:
PDF, 1.20 MB
english, 1991
29

Distribution mechanism of voids in Si-implanted GaAs

Year:
1991
Language:
english
File:
PDF, 1.15 MB
english, 1991
31

Electronic conduction mechanisms in thin oxynitride films

Year:
1991
Language:
english
File:
PDF, 545 KB
english, 1991
37

Defects production and annealing in self-implanted Si

Year:
1991
Language:
english
File:
PDF, 1.05 MB
english, 1991
39

Experimental investigation of a thin-film surface polariton polarizer

Year:
1991
Language:
english
File:
PDF, 1016 KB
english, 1991
42

Deposition kinetics of platinum small ohmic contacts and Schottky diodes

Year:
1991
Language:
english
File:
PDF, 1.00 MB
english, 1991
43

Brittle crack propagation in silicon single crystals

Year:
1991
Language:
english
File:
PDF, 1.88 MB
english, 1991
50

Galvanomagnetic behavior of semiconducting FeSi2 films

Year:
1991
Language:
english
File:
PDF, 708 KB
english, 1991
52

Bipolar-charge-transporting organic photoconductors

Year:
1991
Language:
english
File:
PDF, 834 KB
english, 1991
55

Interaction of a screw dislocation with an interface crack

Year:
1991
Language:
english
File:
PDF, 1.05 MB
english, 1991
60

Reaction of oxygen with in situ H2S-treated GaAs (001) surfaces

Year:
1991
Language:
english
File:
PDF, 984 KB
english, 1991
63

Grain boundary scattering in CuInSe2 films

Year:
1991
Language:
english
File:
PDF, 802 KB
english, 1991
64

Rectification in heavily doped p-type GaAs/AlAs heterojunctions

Year:
1991
Language:
english
File:
PDF, 622 KB
english, 1991
65

Thermal analysis for improved performance of transferred-electron oscillators

Year:
1991
Language:
english
File:
PDF, 542 KB
english, 1991
66

Piezoelectric properties of GaAs for application in stress transducers

Year:
1991
Language:
english
File:
PDF, 788 KB
english, 1991
67

Pulse-modulated microwave plasma etching

Year:
1991
Language:
english
File:
PDF, 558 KB
english, 1991
68

On the comparison between Josephson-junction array variations

Year:
1991
Language:
english
File:
PDF, 662 KB
english, 1991
71

Transverse photothermal beam deflection within a solid

Year:
1991
Language:
english
File:
PDF, 1.19 MB
english, 1991
72

Superposition principle in small-angle light scattering at high frequency

Year:
1991
Language:
english
File:
PDF, 514 KB
english, 1991
74

The electrical properties of a-Ge/a-SiOx superlattices

Year:
1991
Language:
english
File:
PDF, 821 KB
english, 1991
75

Transmission electron microscopy study of V-Sr-Tl-O system

Year:
1991
Language:
english
File:
PDF, 669 KB
english, 1991
76

High field electrical conduction and breakdown in silicon incorporated polyethylene films

Year:
1991
Language:
english
File:
PDF, 1015 KB
english, 1991
81

The expansion of the tritide TaT0.37 at 10 K due to single interstitial 3He atoms

Year:
1991
Language:
english
File:
PDF, 528 KB
english, 1991
82

Correlation factors for diffusion in binary random alloys with fcc structure

Year:
1991
Language:
english
File:
PDF, 1006 KB
english, 1991