In situ, near-ideal epitaxial Al/AlxGa1−xAs Schottky barriers formed by molecular beam epitaxy
Missous, M., Truscott, W. S., Singer, K. E.Volume:
68
Year:
1990
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.346528
File:
PDF, 949 KB
english, 1990