Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing
Chand, N., People, R., Baiocchi, F. A., Wecht, K. W., Cho, A. Y.Volume:
49
Year:
1986
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.97556
File:
PDF, 438 KB
english, 1986