Volume 49; Issue 13

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Applied Physics Letters
Volume 49; Issue 13

Applied Physics Letters

Volume 49; Issue 13

1

Function of cobalt and platinum on p-InP in the photoevolution of hydrogen from alkaline solutions

Goodman, C. E., Wessels, B. W.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 393 KB

english, 1986

2

Far-infrared study of alloying in the HgTe-CdTe superlattice

S. Perkowitz, D. Rajavel, I. K. Sou, J. Reno, J. P. Faurie, C. E. Jones, T. Casselman, K. A. Harris, J. W. Cook, J. F. Schetzina

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 403 KB

english, 1986

3

Steady-state photocarrier grating technique for diffusion length measurement in photoconductive insulators

Ritter, D., Zeldov, E., Weiser, K.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 371 KB

english, 1986

4

Nonlinear nonreciprocity in a coherent mismatched directional coupler

Trillo, S., Wabnitz, S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 463 KB

english, 1986

5

Excimer laser projection etching of GaAs

Brewer, Peter D., McClure, David, Osgood, R. M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 500 KB

english, 1986

6

Optical characterization of InGaAs-InAlAs strained-layer superlattices grown by molecular beam epitaxy

Nishi, Kenichi, Hirose, Kazuyuki, Mizutani, Takashi

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 482 KB

english, 1986

7

Integrated quantum well self-electro-optic effect device: 2×2 array of optically bistable switches

Miller, D. A. B., Henry, J. E., Gossard, A. C., English, J. H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 530 KB

english, 1986

8

Structural stability and selectivity of thin epitaxial semiconductors

Mbaye, A. A., Zunger, Alex, Wood, D. M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 518 KB

english, 1986

9

Annealing behavior of Si in ion-implanted α-Ti

Räisänen, J., Keinonen, J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 472 KB

english, 1986

10

Wavelength dependence of laser-induced sputtering from the (111) surface of BaF2

Reif, J., Fallgren, H., Cooke, W. E., Matthias, E.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 479 KB

english, 1986

11

High-efficiency carrier collection and stimulated emission in thin (50 Å) pseudomorphic InxGa1−xAs quantum wells

Anderson, N. G., Lo, Y. C., Kolbas, R. M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 500 KB

english, 1986

12

Effect of group V/III flux ratio on deep electron traps in AlxGa1−xAs (x=0.7) grown by molecular beam epitaxy

Hayakawa, T., Kondo, M., Suyama, T., Takahashi, K., Yamamoto, S., Yano, S., Hijikata, T.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 479 KB

english, 1986

13

Direct observation of effective mass filtering in InGaAs/InP superlattices

Lang, D. V., Sergent, A. M., Panish, M. B., Temkin, H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 470 KB

english, 1986

14

Parametric amplification sampling spectroscopy of luminescence at the subpicosecond time scale in the 1–1.6 μm spectral range

Hulin, D., Migus, A., Antonetti, A., Ledoux, I., Badan, J., Oudar, J. L., Zyss, J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 413 KB

english, 1986

15

Novel laser induced image storage by chemical modification of surfaces in in situ textured amorphous Ge films

Rao, L. Kameswara, Harshavardhan, K. Solomon, Selvarajan, A., Hegde, M. S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 487 KB

english, 1986

16

Cross-sectional transmission electron microscope observation of step-band formation on GexSi1−x(111) vicinal surfaces

Tatsumi, Toru, Aizaki, Naoaki

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 431 KB

english, 1986

17

Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing

Chand, N., People, R., Baiocchi, F. A., Wecht, K. W., Cho, A. Y.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 438 KB

english, 1986

18

Interaction of low-energy implanted atomic H with slow and fast diffusing metallic impurities in Si

Singh, Ranbir, Fonash, S. J., Rohatgi, A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 425 KB

english, 1986

19

Ge0.6Si0.4 rib waveguide avalanche photodetectors for 1.3 μm operation

Temkin, H., Antreasyan, A., Olsson, N. A., Pearsall, T. P., Bean, J. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 467 KB

english, 1986

20

Low-loss electron images of uncoated photoresist in the scanning electron microscope

Wells, Oliver C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 460 KB

english, 1986

21

Growth of Cd1−xZnxTe by molecular beam epitaxy

Feldman, R. D., Austin, R. F., Dayem, A. H., Westerwick, E. H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 481 KB

english, 1986

22

Stepwise monolayer growth of GaAs by switched laser metalorganic vapor phase epitaxy

Doi, Atsutoshi, Aoyagi, Yoshinobu, Namba, Susumu

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 383 KB

english, 1986

23

Electrostatic lenses with very small spherical aberration

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 390 KB

english, 1986

24

Nonlinear guided waves coupled nonlinearly in a planar GaAs/GaAlAs multiple quantum well structure

Cada, M., Gauthier, R. C., Paton, B. E., Chrostowski, J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 436 KB

english, 1986

25

Extension of bearing endurance life by ion implantation

Hirano, Motohisa, Miyake, Shojiro

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 442 KB

english, 1986

26

Ultrafast all-optical gate with subpicosecond ON and OFF response time

Hulin, D., Mysyrowicz, A., Antonetti, A., Migus, A., Masselink, W. T., Morkoç, H., Gibbs, H. M., Peyghambarian, N.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 472 KB

english, 1986

27

Effect of ion bombardment on the surface magnetism of Fe3O4

Aeschlimann, M., Bona, G. L., Meier, F., Stampanoni, M., Zampieri, G., Siegmann, H. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 407 KB

english, 1986

28

In/GaAs reaction: Effect of an intervening oxide layer

Ding, J., Washburn, J., Sands, T., Keramidas, V. G.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 592 KB

english, 1986

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