A phenomenological model of switching in metal-thin...

Journal of Applied Physics 1989 Vol. 65; Iss. 5

A phenomenological model of switching in metal-thin insulator-semiconductor-semiconductor devices: A development of the analogy with the thyristor

Choi, W. K., De Lima, J. J., Owen, A. E., Reynolds, S.
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Volume:
65
Year:
1989
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.342858
File:
PDF, 1.22 MB
english, 1989
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