Kinetics of solid phase epitaxy in buried amorphous Si...

Applied Physics Letters 1996 Vol. 69; Iss. 7

Kinetics of solid phase epitaxy in buried amorphous Si layers formed by MeV ion implantation

McCallum, J. C.
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Volume:
69
Year:
1996
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.116945
File:
PDF, 299 KB
english, 1996
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