Volume 69; Issue 7

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Applied Physics Letters
Volume 69; Issue 7

Applied Physics Letters

Volume 69; Issue 7

1

Epitaxially grown YMnO3 film: New candidate for nonvolatile memory devices

Fujimura, Norifumi, Ishida, Tadashi, Yoshimura, Takeshi, Ito, Taichiro

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 323 KB

english, 1996

2

Direct evidence for a piezoelectriclike effect in coherently strained SiGe/Si heterostructures

Khizhny, V. I., Mironov, O. A., Parker, E. H. C., Phillips, P. J., Whall, T. E., Kearney, M. J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 324 KB

english, 1996

3

Crystalline phases at the p- to n-type transition in Cu-ternary semiconducting films

Morell, G., Katiyar, R. S., Weisz, S. Z., Walter, T., Schock, H. W., Balberg, I.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 357 KB

english, 1996

4

Incoherent interface of InAs grown directly on GaP(001)

Chang, J. C. P., Chin, T. P., Woodall, J. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 681 KB

english, 1996

5

Thermally activated interface shift in the tungsten/silicon multilayers

Jergel, M., Bochníček, Z., Majková, E., Senderák, R., Luby, Š.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 293 KB

english, 1996

6

In situ reflectance monitoring of InP/InGaAsP films grown by metalorganic vapor phase epitaxy

Lum, R. M., McDonald, M. L., Bean, J. C., Vandenberg, J., Pernell, T. L., Chu, S. N. G., Robertson, A., Karp, A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 334 KB

english, 1996

7

Growth of colossal magnetoresistance thin films on silicon

Trajanovic, Z., Kwon, C., Robson, M. C., Kim, K.-C., Rajeswari, M., Ramesh, R., Venkatesan, T., Lofland, S. E., Bhagat, S. M., Fork, D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 320 KB

english, 1996

8

Two-dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H–SiC and sapphire substrates

Redwing, J. M., Tischler, M. A., Flynn, J. S., Elhamri, S., Ahoujja, M., Newrock, R. S., Mitchel, W. C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 307 KB

english, 1996

9

Use of poly(phenyl quinoxaline) as an electron transport material in polymer light-emitting diodes

O’Brien, D., Weaver, M. S., Lidzey, D. G., Bradley, D. D. C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 231 KB

english, 1996

10

Effect of Si doping on the dislocation structure of GaN grown on the A-face of sapphire

Ruvimov, Sergei, Liliental-Weber, Zuzanna, Suski, Tadeusz, Ager, Joel W., Washburn, Jack, Krueger, Joachim, Kisielowski, Christian, Weber, Eicke R., Amano, H., Akasaki, I.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 440 KB

english, 1996

11

Effects of thermally grown native oxides on the luminescence properties of compound semiconductors

Islam, M. R., Dupuis, R. D., Curtis, A. P., Stillman, G. E.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 307 KB

english, 1996

12

Microscopic structure of gold particles in a metal polymer composite film

José-Yacamán, M., Pérez, R., Santiago, P., Benaissa, M., Gonsalves, K., Carlson, G.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 684 KB

english, 1996

13

The role of atomic size asperities in the mechanical deformation of nanocontacts

Mann, A. B., Pethica, J. B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 310 KB

english, 1996

14

Optimization of gate dopant concentration and microstructure for improved electrical and reliability characteristics of ultrathin oxides and N2O oxynitrides

Chou, Anthony I., Lai, Kafai, Kumar, Kiran, Lee, Jack C., Gardner, Mark, Fulford, Jim

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 319 KB

english, 1996

15

Thermal annealing of implantation-induced compaction for improved silica waveguide performance

Johnson, C. M., Ridgway, M. C., Leech, P. W.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 323 KB

english, 1996

16

Fabrication and characterization of sol-gel planar waveguides doped with rare-earth ions

Orignac, X., Barbier, D., Du, X. M., Almeida, R. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 305 KB

english, 1996

17

Extreme ultraviolet line emission at 24.7 nm from Li-like nitrogen plasma produced by a short KrF excimer laser pulse

Kim, N. S., Djaoui, A., Key, M. H., Neely, D., Preston, S. G., Zepf, M., Smith, C. G., Wark, J. S., Zhang, J., Offenberger, A. A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 321 KB

english, 1996

18

Evidence for thin-film protection of visible photocathodes

Breskin, A., Buzulutskov, A., Chechik, R., Prager, M., Shefer, E.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 308 KB

english, 1996

19

Electro-optical characterization of poled-polymer films in transmission

Lundquist, P. M., Jurich, M., Wang, J.-F., Zhou, H., Marks, T. J., Wong, G. K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 321 KB

english, 1996

20

Strain in InAs islands grown on InP(001) analyzed by Raman spectroscopy

Groenen, J., Mlayah, A., Carles, R., Ponchet, A., Le Corre, A., Salaün, S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 373 KB

english, 1996

21

Mapping the potential of graphite nanotubes with electron holography

Lin, Xiwei, Dravid, Vinayak P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 1.48 MB

english, 1996

22

Effect of rapid thermal annealing on carrier lifetimes of arsenic-ion-implanted GaAs

Lin, Gong-Ru, Chen, Wen-Chung, Ganikhanov, Feruz, Chang, C.-S., Pan, Ci-Ling

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 698 KB

english, 1996

23

Structural properties of Pt/p -InP heterostructures

Kim, T. W., Yoon, Y. S., Lee, J. Y.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 358 KB

english, 1996

24

Surfactant-mediated epitaxy of metastable SnGe alloys

Lyman, P. F., Bedzyk, M. J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 347 KB

english, 1996

25

Localized epitaxial growth of hexagonal and cubic SiC films on Si by vacuum annealing

Luo, Jian-Shing, Lin, Wen-Tai

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 430 KB

english, 1996

26

An optical heterodyne experiment for sensitive detection of laser induced photocarrier gratings in semiconductors

Strauss, J., Hundhausen, M., Ley, L.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 264 KB

english, 1996

27

Analysis of the transport mechanism in GaAs/AlGaAs quantum-well infrared photodetection structures using time resolved photocurrent measurements

Ehret, S., Schneider, H., Schönbein, C., Bihlmann, G., Fleissner, J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 261 KB

english, 1996

28

Demonstration of light-hole behavior in quaternary GaInAsSb/AlGaAsSb quantum wells using infrared photoluminescence spectroscopy

Shen, W. Z., Shen, S. C., Tang, W. G., Chang, Y., Zhao, Y., Li, A. Z.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 249 KB

english, 1996

29

Phase coupling of two optically pumped vertical-cavity surface-emitting lasers

Hendriks, R. F. M., van Exter, M. P., Woerdman, J. P., van der Poel, C. J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 412 KB

english, 1996

30

Raman spectra of indium nitride thin films grown by microwave-excited metalorganic vapor phase epitaxy on (0001) sapphire substrates

Kwon, Hyuk-Joo, Lee, Yong-Hyun, Miki, Osamu, Yamano, Hirofumi, Yoshida, Akira

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 262 KB

english, 1996

31

Activation volume for arsenic diffusion in germanium

Mitha, Salman, Aziz, Michael J., Schiferl, David, Poker, David B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 259 KB

english, 1996

32

Magnetic field dependence of exciton oscillator strength by measurements of magnetoexciton-polariton mode splitting in quantum wells with a microcavity

Tanaka, Takuji, Zhang, Zhenlong, Nishioka, Masao, Arakawa, Yasuhiko

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 257 KB

english, 1996

33

Morphological characterization and strain release of GaAs/InAs (001) heterostructures

Attolini, G., Chimenti, E., Franzosi, P., Gennari, S., Pelosi, C., Lottici, P. P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 485 KB

english, 1996

34

Observation of misfit dislocations at the InxGa1−xAs/GaAs interface by ballistic-electron-emission microscopy

Lee, E. Y., Bhargava, S., Chin, M. A., Narayanamurti, V., Pond, K. J., Luo, K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 535 KB

english, 1996

35

Enhanced formation of the C54 phase of TiSi2 by an interposed layer of molybdenum

Mouroux, A., Zhang, S. -L., Kaplan, W., Nygren, S., Östling, M., Petersson, C. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 258 KB

english, 1996

36

Quantum-well intermixing in Si1−xGex/Si strained-layer heterostructures using ion implantation

Labrie, D., Lafontaine, H., Rowell, N., Charbonneau, S., Houghton, D., Goldberg, R. D., Mitchell, I. V.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 253 KB

english, 1996

37

Ionic and neutral growth of dust in plasmas

Haaland, P., Garscadden, A., Ganguly, B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 517 KB

english, 1996

38

Kinetics of solid phase epitaxy in buried amorphous Si layers formed by MeV ion implantation

McCallum, J. C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 299 KB

english, 1996

39

Highly luminescent Eu3+ or Tb3+ doped and ZnO sensitized optical fibers drawn from silicon compatible sealing glasses

Rüter, D., Bauhofer, W.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 259 KB

english, 1996

40

Improvement of carrier capture efficiency of short-period GaAs/AlGaAs quantum wire array by a new lithography method

Kim, Tae Geun, Kim, Eun Kyu, Min, Suk-Ki, Park, Jung-Ho

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 252 KB

english, 1996

41

Copper nitride and tin nitride thin films for write-once optical recording media

Maruyama, Toshiro, Morishita, Tomonori

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 237 KB

english, 1996

42

Electron Auger processes in mid-infrared InAsSb/InGaAs heterostructures

Hjalmarson, H. P., Kurtz, S. R.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 274 KB

english, 1996

43

Evolution of implanted carbon in silicon upon pulsed excimer laser annealing

Kántor, Z., Fogarassy, E., Grob, A., Grob, J. J., Muller, D., Prévot, B., Stuck, R.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 249 KB

english, 1996

44

Depression of melting point of multidomained bismuth in aluminum based metallic glass nanocomposites

Goswami, R., Chattopadhyay, K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 373 KB

english, 1996

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