Cl2 and HCl radical beam etching of GaAs and InP

Applied Physics Letters 1990 Vol. 56; Iss. 17

Cl2 and HCl radical beam etching of GaAs and InP

Lishan, David G., Hu, Evelyn L.
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Volume:
56
Year:
1990
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.103111
File:
PDF, 550 KB
english, 1990
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