Volume 56; Issue 17

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Applied Physics Letters
Volume 56; Issue 17

Applied Physics Letters

Volume 56; Issue 17

1

Imaging of ferroelectric domain walls by force microscopy

Saurenbach, F., Terris, B. D.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 657 KB

english, 1990

2

Theoretical explanation of the control of the Schottky barrier height using an ultrathin interface metal layer

Tuy, T. Q., Mojzes, I.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 588 KB

english, 1990

3

Optical and electronic properties of doped silicon from 0.1 to 2 THz

van Exter, Martin, Grischkowsky, D.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 549 KB

english, 1990

4

Approximate theory of highly absorbing polymer ablation by nanosecond laser pulses

Furzikov, N. P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 485 KB

english, 1990

5

Continuous-wave operation and mirror loss of a U-shaped GaAs/AlGaAs laser diode with two totally reflecting mirrors

Shimokawa, Fusao, Tanaka, Hidenao, Sawada, Renshi, Hara, Shigeji

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 604 KB

english, 1990

6

Te doping study in molecular beam epitaxial growth of GaSb using Sb2Te3

Chiu, T. H., Ditzenberger, J. A., Luftman, H. S., Tsang, W. T., Ha, N. T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 579 KB

english, 1990

7

Transverse modulators with a record reflection change of >20%/V using asymmetric Fabry–Perot structures

Yan, R. H., Simes, R. J., Coldren, L. A., Gossard, A. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 500 KB

english, 1990

8

Properties of closely spaced independently addressable lasers fabricated by impurity-induced disordering

Thornton, Robert L., Mosby, William J., Donaldson, Rose M., Paoli, Thomas L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 585 KB

english, 1990

9

Si as a diffusion barrier for Ge/GaAs heterojunctions

Strite, S., Ünlü, M. S., Adomi, K., Morkoç, H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 526 KB

english, 1990

10

Formation of a high quality two-dimensional electron gas on cleaved GaAs

Pfeiffer, Loren, West, K. W., Stormer, H. L., Eisenstein, J. P., Baldwin, K. W., Gershoni, D., Spector, J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 617 KB

english, 1990

11

Exchange interaction effects in quantum well infrared detectors and absorbers

Choe, J.-W., O, Byungsung, Bandara, K. M. S. V., Coon, D. D.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 589 KB

english, 1990

12

Pump wavelength dependence of the gain factor in 1.48 μm pumped Er3+-doped fiber amplifiers

Kimura, Yasuo, Suzuki, Kazunori, Nakazawa, Masataka

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 539 KB

english, 1990

13

Contribution of second-harmonic generation to the creation of free carriers in CdTe single crystals

Petrovic, Mark S., Suchocki, Andrzej, Powell, Richard C., Cantwell, Gene, Aldridge, Jeff

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 588 KB

english, 1990

14

Microwave imaging by a moment-method solution to two-dimensional inverse scattering: Preliminary experimental results

Caorsi, S., Gragnani, G. L., Pastorino, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 431 KB

english, 1990

15

Light scattering determination of subband structure and population of modulation-doped multiple quantum wells

Richards, D., Fasol, G., Ploog, K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 592 KB

english, 1990

16

Flux creep in Bi2Sr2CaCu2O8 epitaxial films

Zeldov, E., Amer, N. M., Koren, G., Gupta, A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 595 KB

english, 1990

17

Diode-pumped single-mode fluorozirconate fiber laser from the 4I11/2→4I13/2 transition in erbium

Allen, R., Esterowitz, L., Ginther, R. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 456 KB

english, 1990

18

Two pseudobinary semiconducting silicides: RexMo1−xSi2 and CrxV1−xSi2

Long, Robert G., Mahan, John E.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 489 KB

english, 1990

19

Identification of silicon nitride/InGaAs interface states

Piccirillo, A., Gobbi, A. L., Ferraris, M., Giannetti, R., Bagnoli, P. E.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 450 KB

english, 1990

20

Radioactive metal tracer investigation of Pd2Si formation

Farmer, J., Wandt, M. A. E., Pretorius, R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 507 KB

english, 1990

21

Orientation-dependent doping in organometallic chemical vapor deposition on nonplanar InP substrates: Application to double-heterostructure lasers and lateral p-n junction arrays

Bhat, R., Zah, C. E., Caneau, C., Koza, M. A., Menocal, S. G., Schwarz, S. A., Favire, F. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 529 KB

english, 1990

22

Solid phase epitaxial growth of GaAs on Si (111)

Takano, Y., Kanaya, Y., Kawai, T., Torihata, T., Pak, K., Yonezu, H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 498 KB

english, 1990

23

Doubly resonant optical parametric oscillator synchronously pumped by a frequency-doubled, mode-locked, and Q-switched diode laser pumped neodymium yttrium lithium fluoride laser

Maker, G. T., Ferguson, A. I.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 474 KB

english, 1990

24

Improved design of AlAs/GaAs resonant tunneling diodes

Cheng, Peng, Harris, James S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 479 KB

english, 1990

25

Cl2 and HCl radical beam etching of GaAs and InP

Lishan, David G., Hu, Evelyn L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 550 KB

english, 1990

26

Aerosol jet etching of Hg1−xCdxTe

Jurcik, B. J., Brock, J. R., Trachtenberg, I.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 572 KB

english, 1990

27

Achievement of high gain in a multiple quantum channel lateral heterojunction bipolar transistor

Thornton, R. L., Mosby, W. J., Chung, H. F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 547 KB

english, 1990

28

Orientation-dependent perimeter recombination in GaAs diodes

Stellwag, T. B., Melloch, M. R., Lundstrom, M. S., Carpenter, M. S., Pierret, R. F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 579 KB

english, 1990

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