Limitations in low-temperature silicon epitaxy due to water...

Applied Physics Letters 1988 Vol. 53; Iss. 25

Limitations in low-temperature silicon epitaxy due to water vapor and oxygen in the growth ambient

Friedrich, J. A., Neudeck, G. W., Liu, S. T.
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Volume:
53
Year:
1988
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.100530
File:
PDF, 564 KB
english, 1988
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