Volume 53; Issue 25

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Applied Physics Letters
Volume 53; Issue 25

Applied Physics Letters

Volume 53; Issue 25

1

Cyclotron resonance measurements of electron effective mass in strained AlGaAs/InGaAs/GaAs pseudomorphic structures

Liu, C. T., Lin, S. Y., Tsui, D. C., Lee, H., Ackley, D.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 585 KB

english, 1988

2

Distortion of infrared picosecond pulses after propagation in atmospheric air

Seilmeier, A., Wörner, M., Hübner, H.-J., Kaiser, W.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 521 KB

english, 1988

3

Formation of epitaxial Si1−xGex films produced by wet oxidation of amorphous SiGe layers deposited on Si(100)

Prokes, S. M., Tseng, W. F., Christou, A.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 557 KB

english, 1988

4

Electronic structure modification induced by ion irradiation during film growth of Cu and Pd

Parmigiani, F., Kay, E.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 593 KB

english, 1988

5

Line spectrum of the interstitial iron donor in silicon

Olajos, J., Nielsen, B. Bech, Kleverman, M., Omling, P., Emanuelsson, P., Grimmeiss, H. G.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 642 KB

english, 1988

6

Atomic-layer epitaxy of (111)CdTe on BaF2 substrates

Faschinger, W., Sitter, H., Juza, P.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 557 KB

english, 1988

7

Disordering of Si-implanted GaAs-AlGaAs superlattices by rapid thermal annealing

Lee, S.-Tong, Braunstein, G., Fellinger, P., Kahen, K. B., Rajeswaran, G.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 638 KB

english, 1988

8

InP:Yb layers grown by adduct metalorganic vapor phase epitaxy using Yb(MeCp)3

Weber, J., Molassioti, A., Moser, M., Stapor, A., Scholz, F., Hörcher, G., Forchel, A., Hammel, A., Laube, G., Weidlein, J.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 505 KB

english, 1988

9

Elimination of pressure-induced fluorescence in diamond anvils

Eggert, Jon H., Goettel, Kenneth A., Silvera, Isaac F.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 632 KB

english, 1988

10

Column III and V ordering in InGaAsP and GaAsP grown on GaAs by metalorganic chemical vapor deposition

Plano, W. E., Nam, D. W., Major, J. S., Hsieh, K. C., Holonyak, N.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 597 KB

english, 1988

11

Tailoring of hole eigenenergies in strained GaAsP/AlGaAs single quantum wells grown by atmospheric pressure organometallic chemical vapor deposition

Bertolet, Daniel C., Hsu, Jung-Kuei, Lau, Kei May

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 576 KB

english, 1988

12

Fine structure of EL2 defect absorption in GaAs

Kuszko, W., Jeżewski, M., Baranowski, J. M., Kaminska, M.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 409 KB

english, 1988

13

Simulation of saturation and relaxation of intersubband absorption in doped quantum wells

Newson, D. J., Kurobe, A.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 593 KB

english, 1988

14

Non-Newtonian strain relaxation in highly strained SiGe heterostructures

Dodson, Brian W., Tsao, Jeffrey Y.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 645 KB

english, 1988

15

Influence of p-InP buffer layers on submicron InGaAs/InP junction field-effect transistors

Steiner, K., Seiler, U., Heime, K., Kuphal, E.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 629 KB

english, 1988

16

Large anisotropy in the upper critical field of sputtered thin films of superconducting Tl-Ba-Ca-Cu-O

Kang, J. H., Gray, K. E., Kampwirth, R. T., Day, D. W.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 577 KB

english, 1988

17

Cooperative growth phenomena in silicon/germanium low-temperature epitaxy

Meyerson, Bernard S., Uram, Kevin J., LeGoues, Francoise K.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 466 KB

english, 1988

18

Angled etching of GaAs/AlGaAs by conventional Cl2 reactive ion etching

Takamori, Takeshi, Coldren, Larry A., Merz, James L.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 450 KB

english, 1988

19

Fiber optic distributed thermal sensor

Zur, A., Katzir, A.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 600 KB

english, 1988

20

Negative differential resistance in AlAs/NiAl/AlAs heterostructures: Evidence for size quantization in metals

Tabatabaie, N., Sands, T., Harbison, J. P., Gilchrist, H. L., Keramidas, V. G.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 606 KB

english, 1988

21

Thickness and annealing dependence of the superconducting transition temperature of YBa2Cu3O7−x thin films on oxidized silicon and polycrystalline alumina substrates

Mogro-Campero, A., Turner, L. G., Kendall, G.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 477 KB

english, 1988

22

Superhard material comparable in hardness to diamond

Badzian, Andrzej R.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 588 KB

english, 1988

23

Monolithic integration of a short-length GaInAs photoconductor with a GaAs/GaAlAs optical waveguide on a GaAs semi-insulating substrate

Mallecot, F., Vinchant, J. F., Razeghi, M., Vandermoere, D., Vilcot, J. P., Decoster, D.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 475 KB

english, 1988

24

All-optical routing networks based on bistable interferometers

Buller, G. S., Paton, C. R., Smith, S. D., Walker, A. C.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 532 KB

english, 1988

25

Surface structure of Bi2Sr2CaCu2O8+δ high-temperature superconductors studied using low-energy electron diffraction

Lindberg, P. A. P., Shen, Z.-X., Wells, B. O., Mitzi, D. B., Lindau, I., Spicer, W. E., Kapitulnik, A.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 533 KB

english, 1988

26

Effect of local alloy disorder on emission kinetics of deep donors (DX centers) in AlxGa1−xAs of low Al content

Mooney, P. M., Theis, T. N., Wright, S. L.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 561 KB

english, 1988

27

Limitations in low-temperature silicon epitaxy due to water vapor and oxygen in the growth ambient

Friedrich, J. A., Neudeck, G. W., Liu, S. T.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 564 KB

english, 1988

28

High-temperature stability of Si/SiO2 interfaces and the influence of SiO flux on thermomigration of impurities in SiO2

Celler, G. K., Trimble, L. E.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 570 KB

english, 1988

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