Defect reduction in ZnSe grown by molecular beam epitaxy on...

Applied Physics Letters 1996 Vol. 69; Iss. 1

Defect reduction in ZnSe grown by molecular beam epitaxy on GaAs substrates cleaned using atomic hydrogen

Yu, Zhonghai, Buczkowski, S. L., Giles, N. C., Myers, T. H.
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Volume:
69
Year:
1996
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.118127
File:
PDF, 293 KB
english, 1996
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