Volume 69; Issue 1

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Applied Physics Letters
Volume 69; Issue 1

Applied Physics Letters

Volume 69; Issue 1

1

Lattice parameters of gallium nitride

Leszczynski, M., Teisseyre, H., Suski, T., Grzegory, I., Bockowski, M., Jun, J., Porowski, S., Pakula, K., Baranowski, J. M., Foxon, C. T., Cheng, T. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 357 KB

english, 1996

2

Electro-optic properties of the organic salt 4-N,N-dimethylamino-4Ê¹-NÊ¹-methyl-stilbazolium tosylate

Pan, F., KnoÌpfle, G., Bosshard, Ch., Follonier, S., Spreiter, R., Wong, M. S., GuÌnter, P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 386 KB

english, 1996

3

A composite quantum well field-effect transistor

Yang, M. J., Wang, Fu-Cheng, Yang, C. H., Bennett, B. R., Do, T. Q.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 317 KB

english, 1996

4

Velocity overshoot greater than 107 cm/s at room temperature in sub-0.1-Î¼m silicon-on-insulator devices

Mizuno, Tomohisa, Ohba, Ryuji, Ohuchi, Kazuya

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 293 KB

english, 1996

5

Diamond-like carbon films grown by very high frequency (100 MHz) plasma enhanced chemical vapor deposition technique

Kumar, Sushil, Dixit, P. N., Sarangi, D., Bhattacharyya, R.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 225 KB

english, 1996

6

High temperature adduct formation of trimethylgallium and ammonia

Thon, A., Kuech, T. F.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 318 KB

english, 1996

7

The effect of annealing on the structure and dielectric properties of BaxSr1−xTiO3 ferroelectric thin films

Knauss, L. A., Pond, J. M., Horwitz, J. S., Chrisey, D. B., Mueller, C. H., Treece, Randolph

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 332 KB

english, 1996

8

E0 band-gap energy and lattice constant of ternary Zn1−xMgxSe as functions of composition

B. Jobst, D. Hommel, U. Lunz, T. Gerhard, G. Landwehr

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 254 KB

english, 1996

9

High-speed and high-sensitivity silicon-on-insulator metal-semiconductor-metal photodetector with trench structure

Ho, Jacob Y. L., Wong, K. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 999 KB

english, 1996

10

Phase identification of boron nitride thin films by polarized infrared reflection spectroscopy

Plass, M. F., Fukarek, W., Mändl, S., Möller, W.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 244 KB

english, 1996

11

Giant acoustic stop bands in two-dimensional periodic arrays of liquid cylinders

Kushwaha, M. S., Halevi, P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 315 KB

english, 1996

12

Low temperature current imaging tunneling spectroscopy on wet chemically etched quantum wires

Smoliner, J., Eder, C., Böhm, G., Weimann, G.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 1.77 MB

english, 1996

13

Self-screening of the ferroelectric polarization in smectic C∗ cells in the bookshelf geometry

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 321 KB

english, 1996

14

High linear density written transitions in exchange isolated Pt/CoCrTa multilayer thin films

Liu, Wen H., Schouterden, Kris, Mei, Lin, Ho, Kuoksan, Lairson, Bruce M., Payne, Alexander P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 573 KB

english, 1996

15

Sol–gel epitaxial growth of La1−xCaxMnO3 with colossal magnetoresistance effect

Bae, Seung-Young, Wang, Shan Xiang

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 321 KB

english, 1996

16

Electroluminescence from Au/Si nitride film/Si with the film prepared by electron cyclotron resonance method

Li, A. P., Zhang, Lidong, Zhang, Y. X., Qin, G. G., Wang, Xin, Hu, X. W.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 300 KB

english, 1996

17

Strong instantaneous contribution in femtosecond degenerate four-wave mixing from 350 μm InP due to virtual excitation

Yu, Sungkyu, Chu, Jang Hee, Lee, Joo In, Kim, Dongho, Yee, Y. H., Kim, D. S., Leem, Jae-Young, Lee, Cheul-Ro, Lee, Jong Hyun

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 319 KB

english, 1996

18

Degrees of visible determinism in crystal growth striations as a measure of crystal quality

Miyano, Takaya, Morita, Hiroshi, Shintani, Akira, Kanda, Tadashi

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 320 KB

english, 1996

19

The effect of carbon on strain relaxation and phase formation in the Ti/Si1−x−yGexCy/Si contact system

Eyal, A., Brener, R., Beserman, R., Eizenberg, M., Atzmon, Z., Smith, David J., Mayer, J. W.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 452 KB

english, 1996

20

Hot-electron induced passivation of silicon dangling bonds at the Si(111)/SiO2 interface

Cartier, E., Stathis, J. H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 341 KB

english, 1996

21

An optically pumped GaN–AlGaN vertical cavity surface emitting laser

Redwing, Joan M., Loeber, David A. S., Anderson, Neal G., Tischler, Michael A., Flynn, Jeffrey S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 341 KB

english, 1996

22

In situ growth and superconducting properties of YNi2B2C thin films

Andreone, A., Iavarone, M., Vaglio, R., Manini, P., Cogliati, E.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 318 KB

english, 1996

23

On the voltage stability of lateral barriers in in-plane-gated structures

Baumgartner, P., Engel, C., Abstreiter, G.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 254 KB

english, 1996

24

Production of Eδʹ center induced by dry heat treatment of nonburied SiO2 films

Zvanut, M. E., Chen, T. L.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 262 KB

english, 1996

25

Thermal analysis using a micromechanical calorimeter

Berger, R., Gerber, Ch., Gimzewski, J. K., Meyer, E., Güntherodt, H. J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 908 KB

english, 1996

26

Improvement of the Young’s modulus of SiC film by low-pressure chemical vapor deposition with B2H6 gas

Murooka, Ken-ichi, Higashikawa, Iwao, Gomei, Yoshio

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 254 KB

english, 1996

27

Anomalous surface segregation of Sb in Si during epitaxial growth

Kimura, K., Endoh, Y., Mannami, M., Gossmann, H.-J., Gilmer, G. H., Feldman, L. C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 259 KB

english, 1996

28

Laser operation of an Nd:Gd3Ga5O12 thin-film optical waveguide fabricated by pulsed laser deposition

Gill, Devinder S., Anderson, Andrew A., Eason, Robert W., Warburton, T. J., Shepherd, D. P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 255 KB

english, 1996

29

Demonstration of a sub-picosecond x-ray streak camera

Chang, Z., Rundquist, A., Zhou, J., Murnane, M. M., Kapteyn, H. C., Liu, X., Shan, B., Liu, J., Niu, L., Gong, M., Zhang, X.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 252 KB

english, 1996

30

Erratum: ‘‘High resolution characterization of structural inhomogeneities in YBa2Cu3O7−δ crystals with sharp superconducting transitions’’ [Appl. Phys. Lett. 68, 2729 (1996)]

Qadri, S. B., Osofsky, M. S., Browning, V. M., Skelton, E. F., Vanderah, T. A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 212 KB

english, 1996

31

Radiation enhanced diffusion of low energy ion-induced damage

Chen, Ching-Hui, Green, Debora L., Hu, Evelyn L., Ibbetson, James P., Petroff, Pierre M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 252 KB

english, 1996

32

Scanned-probe lateral-force determination of fluid-dynamic effects near a solid surface in air

Drummond Roby, M. A., Wetsel, G. C., Wang, C.-Y.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 270 KB

english, 1996

33

Microstructure of laterally oxidized AlxGa1−xAs layers in vertical-cavity lasers

Twesten, R. D., Follstaedt, D. M., Choquette, K. D., Schneider, R. P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 421 KB

english, 1996

34

Measurements of density fluctuations by modulation spectroscopy

Dharamsi, A. N., Bullock, A. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 266 KB

english, 1996

35

GaAs/AlGaAs quantum wires fabricated by SiO2 capping-induced intermixing

Pépin, A., Vieu, C., Schneider, M., Planel, R., Bloch, J., Assayag, G. Ben, Launois, H., Marzin, J. Y., Nissim, Y.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 342 KB

english, 1996

36

Low-temperature processing of superconducting Tl2Ba2Ca1Cu2Ox films on CeO2 buffered sapphire

O’Connor, J. D., Dew-Hughes, D., Bramley, A. P., Grovenor, C. R. M., Goringe, M. J., Morley, S. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 615 KB

english, 1996

37

Controlling polarization of vertical-cavity surface-emitting lasers using amorphous silicon subwavelength transmission gratings

Schablitsky, Steven J., Zhuang, Lei, Shi, Rick C., Chou, Stephen Y.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 249 KB

english, 1996

38

Defect reduction in ZnSe grown by molecular beam epitaxy on GaAs substrates cleaned using atomic hydrogen

Yu, Zhonghai, Buczkowski, S. L., Giles, N. C., Myers, T. H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 293 KB

english, 1996

39

Optical detection of charge carriers in organic light-emitting diodes

Redecker, M., Bässler, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 234 KB

english, 1996

40

Photoluminescence study of Si1−yCy/Si quantum well structures grown by molecular beam epitaxy

Brunner, K., Eberl, K., Winter, W., Jin-Phillipp, N. Y.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 450 KB

english, 1996

41

Oscillations of interlayer coupling and magneto-optics in sputtered Co–Al/Cu multilayers

Zhou, Shi-Ming, Chen, Liang-Yao, Zheng, Wei-Ming, Zhu, Wei-Rong, Wang, Yu, Wang, Ya-Dong, Zheng, Yu-Xiang, Jin, Qing-Yuan, Qian, You-Hua

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 320 KB

english, 1996

42

Gain analysis for surface emission by optical pumping of wurtzite GaN

Domen, K., Kondo, K., Kuramata, A., Tanahashi, T.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 323 KB

english, 1996

43

Fabrication of in-plane aligned a-axis oriented YBa2Cu3O7−x trilayer Josephson junctions

Takeuchi, I., Warburton, P. A., Trajanovic, Z., Lobb, C. J., Dong, Z. W., Venkatesan, T., Bari, M. A., Booij, W. E., Tarte, E. J., Blamire, M. G.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 385 KB

english, 1996

44

Reduction of threading dislocation density in InP-on-Si heteroepitaxy with strained short-period superlattices

Samonji, K., Yonezu, H., Takagi, Y., Iwaki, K., Ohshima, N., Shin, J. K., Pak, K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 630 KB

english, 1996

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