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Influence of the preepitaxial annealing and polycrystalline silicon deposition processes on oxygen precipitation and internal gettering in N/N+(100) epitaxial silicon wafers
Wijaranakula, W., Matlock, J. H.Volume:
65
Year:
1989
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.342853
File:
PDF, 1002 KB
english, 1989