Evidence of interface trap creation by hot-electrons in...

Applied Physics Letters 1996 Vol. 69; Iss. 10

Evidence of interface trap creation by hot-electrons in AlGaAs/GaAs high electron mobility transistors

Meneghesso, Gaudenzio, Paccagnella, Alessandro, Haddab, Youcef, Canali, Claudio, Zanoni, Enrico
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Volume:
69
Year:
1996
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.117598
File:
PDF, 279 KB
english, 1996
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