Volume 69; Issue 10

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Applied Physics Letters
Volume 69; Issue 10

Applied Physics Letters

Volume 69; Issue 10

1

Colloidal chemical synthesis and characterization of InAs nanocrystal quantum dots

Guzelian, A. A., Banin, U., Kadavanich, A. V., Peng, X., Alivisatos, A. P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 607 KB

english, 1996

2

Passivation of GaAs surface by sulfur glow discharge

Hou, Xiaoyuan, Chen, Xiying, Li, Zheshen, Ding, Xunmin, Wang, Xun

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 340 KB

english, 1996

3

Device grade microcrystalline silicon owing to reduced oxygen contamination

Torres, P., Meier, J., FluÌckiger, R., Kroll, U., Selvan, J. A. Anna, Keppner, H., Shah, A., Littelwood, S. D., Kelly, I. E., GiannouleÌs, P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 283 KB

english, 1996

4

Ridge-geometry InGaN multi-quantum-well-structure laser diodes

Nakamura, Shuji, Senoh, Masayuki, Nagahama, Shin-ichi, Iwasa, Naruhito, Yamada, Takao, Matsushita, Toshio, Sugimoto, Yasunobu, Kiyoku, Hiroyuki

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 284 KB

english, 1996

5

Development of an optically recording velocity interferometer system for laser induced shock waves measurements

Moshe, E., Dekel, E., Henis, Z., Eliezer, S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 375 KB

english, 1996

6

Manganese perovskites: Thick-film based position sensors fabrication

Balcells, Ll., Enrich, R., Mora, J., Calleja, A., Fontcuberta, J., Obradors, X.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 463 KB

english, 1996

7

Anisotropy of hexagonal boron nitride core absorption spectra by x-ray Raman spectroscopy

Watanabe, N., Hayashi, H., Udagawa, Y., Takeshita, K., Kawata, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 415 KB

english, 1996

8

Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix

Ledentsov, N. N., Krestnikov, I. L., Maximov, M. V., Ivanov, S. V., Sorokin, S. L., Kopâev, P. S., Alferov, Zh. I., Bimberg, D., Sotomayor Torres, C. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 309 KB

english, 1996

9

Selective oxidation of buried AlGaAs versus AlAs layers

Choquette, Kent D., Geib, K. M., Chui, H. C., Hammons, B. E., Hou, H. Q., Drummond, T. J., Hull, Robert

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 1.29 MB

english, 1996

10

The role of point defects and arsenic precipitates in carrier trapping and recombination in low-temperature grown GaAs

Lochtefeld, A. J., Melloch, M. R., Chang, J. C. P., Harmon, E. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 275 KB

english, 1996

11

Actinometric thermoluminescence response of KCl1−xBrx:Eu2+ mixed crystals

B. Castañeda, R. Aceves, T. M. Piters, M. Barboza-flores, R. Meléndrez, R. Pérez-salas

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 320 KB

english, 1996

12

Hardness measurement of thin films: Separation from composite hardness

He, J. L., Li, W. Z., Li, H. D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 317 KB

english, 1996

13

Photorefractive two-wave mixing bistability in Fe: KNbO3 without external feedback: Increasing gain bistability

Jost, Bradley M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 306 KB

english, 1996

14

Two kinds of dopant activation in boron-doped hydrogenated amorphous silicon–carbon

Isomura, Masao, Tanaka, Makoto, Tsuda, Shinya

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 319 KB

english, 1996

15

Production of intense atomic nitrogen beam used for doping and synthesis of nitride film

Xu, Ning, Du, Yuan-Cheng, Ying, Zhi-Feng, Li, Fu-Ming

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 311 KB

english, 1996

16

Evaluation of depth profile of defects in ultrathin Si film on buried SiO2 formed by implanted oxygen

Ogura, Atsushi, Tatsumi, Toru, Hamajima, Tomohiro, Kikuchi, Hiroaki

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 664 KB

english, 1996

17

Dependence of generation and structures of stacking faults on growing surface stoichiometries in ZnSe/GaAs

Kuo, L. H., Kimura, K., Miwa, S., Yasuda, T., Yao, T.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 356 KB

english, 1996

18

Photoluminescence characterization of the quantum well structure and influence of optical illumination on the electrical performance of AlGaN/GaN modulation-doped field-effect transistors

Mohammad, S. N., Fan, Z.-F., Salvador, A., Aktas, O., Botchkarev, A. E., Kim, W., Morkoç, Hadis

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 323 KB

english, 1996

19

Photoluminescence study of initial interdiffusion of SiGe/Si quantum wells grown by ultrahigh vacuum-chemical vapor deposition

Lafontaine, H., Houghton, D. C., Rowell, N. L., Aers, G. C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 309 KB

english, 1996

20

Microstructure fabrication using oxidation on partially Ga-terminated Si(111) surfaces

Maruno, S., Fujita, S., Watanabe, H., Ichikawa, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 852 KB

english, 1996

21

Etched-surface roughness measurements from an in situ laser reflectometer

Parker, M. A., Michalak, R. J., Kimmet, J. S., Pirich, A. R., Shire, D. B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 345 KB

english, 1996

22

Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon

Haynes, T. E., Eaglesham, D. J., Stolk, P. A., Gossmann, H.-J., Jacobson, D. C., Poate, J. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 375 KB

english, 1996

23

Radio frequency-SQUID effect in YNi2B2C due to natural grain boundary weak links

Khare, Neeraj, Gupta, A. K., Khare, Sangeeta, Gupta, L. C., Nagarajan, R., Hossain, Z., Vijayaraghavan, R.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 369 KB

english, 1996

24

LiNbO3 phase gratings prepared by a single excimer pulse through a silica phase mask

Luo, G. P., Lu, Y. L., Lu, Y. Q., Guo, X. L., Xiong, S. B., Ge, C. Z., Zhu, Y. Y., Liu, Z. G., Ming, N. B., Wu, J. W., Ding, D. S., Lu, Z. H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 413 KB

english, 1996

25

Evidence of enhanced pinning properties in optimally doped Bi2Sr2Ca1−xYxCu2O8+δ single crystals

Villard, G., Pelloquin, D., Maignan, A., Wahl, A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 331 KB

english, 1996

26

Epitaxial superlattices of TiAg alloy/MgO grown on MgO(001)

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 435 KB

english, 1996

27

Mechanisms of upconverted fluorescence in an Er3+ doped LiNbO3 single crystal

Ju, J. J., Kwon, T. Y., Yun, S. I., Cha, M., Seo, H. J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 266 KB

english, 1996

28

Negative differential conductance in three-terminal silicon tunneling device

Koga, Junji, Toriumi, Akira

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 244 KB

english, 1996

29

17.1% efficient metal-insulator-semiconductor inversion layer silicon solar cells using truncated pyramids

Grauvogl, Manfred, Aberle, Armin G., Hezel, Rudolf

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 294 KB

english, 1996

30

Dependence of threshold current density on the energy-band offsets in Zn1−uCduSe/ZnSzSe1−z/Zn1−xMgxSySe1−y separate-confinement heterostructures lasers

Shahzad, Khalid, Buijs, Maarten

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 283 KB

english, 1996

31

Optimization of pyroelectricity in the smectic-C∗ phase of a liquid-crystalline terpolymer

Geer, R. E., Naciri, J., Ratna, B. R., Shashidhar, R.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 281 KB

english, 1996

32

Polarized neutron reflectometry study of an exchange biased Fe3O4/NiO multilayer

Ball, A. R., Leenaers, A. J. G., van der Zaag, P. J., Shaw, K. A., Singer, B., Lind, D. M., Fredrikze, H., Rekveldt, M.Th.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 259 KB

english, 1996

33

Nature of Mg impurities in GaN

Li, J. Z., Lin, J. Y., Jiang, H. X., Salvador, A., Botchkarev, A., Morkoc, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 273 KB

english, 1996

34

Cu precipitation in Cr ribbon of Cu-15 wt % Cr in situ composite

Jin, Y., Adachi, K., Takeuchi, T., Suzuki, H. G.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 663 KB

english, 1996

35

Arsenic precipitation from thin surface layers of low-temperature grown GaAs

Kiehl, R. A., Yamaguchi, M., Ohshima, T., Saito, M., Yokoyama, N.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 346 KB

english, 1996

36

ICl/Ar electron cyclotron resonance plasma etching of III–V nitrides

Vartuli, C. B., Pearton, S. J., Lee, J. W., Hong, J., MacKenzie, J. D., Abernathy, C. R., Shul, R. J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 358 KB

english, 1996

37

Dramatic photoluminescence quenching of phenylene vinylene oligomer thin films upon submonolayer Ca deposition

Choong, V., Park, Y., Gao, Y., Wehrmeister, T., Müllen, K., Hsieh, B. R., Tang, C. W.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 243 KB

english, 1996

38

Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors

Wu, Y.-F., Keller, B. P., Keller, S., Kapolnek, D., Kozodoy, P., Denbaars, S. P., Mishra, U. K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 583 KB

english, 1996

39

Differential reflectance spectroscopy of GaAs/GaAlAs at elevated temperatures

Kraisingdecha, P., Gal, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 240 KB

english, 1996

40

Erratum: ‘‘Third-order nonlinear optical susceptibilities of the Langmuir–Blodgett films of octa-substituted metallophthalocyanines’’ [Appl. Phys. Lett. 69, 293 (1996)]

Díaz-García, M. A., Cabrera, J. M., Agulló-López, F., Duro, J. A., de la Torre, G., Torres, T., Fernández-Lázaro, F., Delhaes, P., Mingotaud, C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 219 KB

english, 1996

41

Monte Carlo calculations of hot-carrier noise under degenerate conditions

Tadyszak, P., Danneville, F., Cappy, A., Reggiani, L., Varani, L., Rota, L.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 252 KB

english, 1996

42

Charge trapping, isolated Ge defects, and photosensitivity in sputter deposited GeO2:SiO2 thin films

Warren, W. L., Simmons-Potter, K., Potter, B. G., Ruffner, J. A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 264 KB

english, 1996

43

Evidence of interface trap creation by hot-electrons in AlGaAs/GaAs high electron mobility transistors

Meneghesso, Gaudenzio, Paccagnella, Alessandro, Haddab, Youcef, Canali, Claudio, Zanoni, Enrico

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 279 KB

english, 1996

44

A single precursor photolitic chemical vapor deposition of silica film using a dielectric barier discharge xenon excimer lamp

Yokotani, Atsushi, Takezoe, Noritaka, Kurosawa, Kou, Igarashi, Tatsushi, Matsuno, Hiromitu

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 367 KB

english, 1996

45

Noninvasive measurement of charging in plasmas using microelectromechanical charge sensing devices

Pangal, Kiran, Firebaugh, Samara L., Sturm, James C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 326 KB

english, 1996

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