Temperature dependence of the current in SiO2 in the high...

Temperature dependence of the current in SiO2 in the high field tunneling regime

Ricco, B., Fischetti, M. V.
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Volume:
55
Year:
1984
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.333044
File:
PDF, 827 KB
english, 1984
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