Relationship between secondary defects and electrical...

Applied Physics Letters 1986 Vol. 48; Iss. 1

Relationship between secondary defects and electrical activation in ion-implanted, rapidly annealed GaAs

Pearton, S. J., Hull, R., Jacobson, D. C., Poate, J. M., Williams, J. S.
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Volume:
48
Year:
1986
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.96754
File:
PDF, 571 KB
english, 1986
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