Volume 48; Issue 1

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Applied Physics Letters
Volume 48; Issue 1

Applied Physics Letters

Volume 48; Issue 1

1

Dependence of photoetching rates of polymers at 193 nm on optical absorption depth

Cole, H. S., Liu, Y. S., Philipp, H. R.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 414 KB

english, 1986

2

Observation of new common emissions in GaAs produced by ion implantation of four acceptor impurities

Takeuchi, Yoshinori, Makita, Yunosuke, Kudo, Kazuhiro, Nomura, Toshio, Tanaka, Hideki, Irie, Katsuhiro, Ohnishi, Nobukazu

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 569 KB

english, 1986

3

21% (one sun, air mass zero) 4 cm2 GaAs space solar cells

Werthen, J. G., Virshup, G. F., Ford, C. W., Lewis, C. R., Hamaker, H. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 385 KB

english, 1986

4

Morphological studies of oval defects in GaAs epitaxial layers grown by molecular beam epitaxy

Matteson, S., Shih, H. D.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 440 KB

english, 1986

5

Light-induced metastable defects in amorphous silicon: The role of hydrogen

Stutzmann, M., Jackson, W. B., Smith, A. J., Thompson, R.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 439 KB

english, 1986

6

Wafer bonding for silicon-on-insulator technologies

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 489 KB

english, 1986

7

Oxidation resistant sol-gel derived silicon oxynitride thin films

Brow, Richard K., Pantano, Carlo G.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 451 KB

english, 1986

8

Raman scattering study of disordering and alloying of GaAs-AlAs superlattice by As implantation and rapid thermal annealing

Kirillov, D., Ho, P., Davis, G. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 528 KB

english, 1986

9

X-ray refractive index: A tool to determine the average composition in multilayer structures

Miceli, P. F., Neumann, D. A., Zabel, H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 523 KB

english, 1986

10

Effect of organic contaminants on the oxidation kinetics of silicon at room temperature

Licciardello, Antonino, Puglisi, Orazio, Pignataro, Salvatore

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 509 KB

english, 1986

11

Highly efficient multiple emitter index guided array lasers fabricated by silicon impurity induced disordering

Thornton, R. L., Burnham, R. D., Paoli, T. L., Holonyak, N., Deppe, D. G.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 476 KB

english, 1986

12

Hydrogen radical assisted chemical vapor deposition of ZnSe

Oda, S., Kawase, R., Sato, T., Shimizu, I., Kokado, H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 451 KB

english, 1986

13

New laterally selective growth technique by metalorganic chemical vapor deposition

Bedair, S. M., Tischler, M. A., Katsuyama, T.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 406 KB

english, 1986

14

Continuous wave operation of ridge waveguide AlGaAs/GaAs distributed feedback lasers with low threshold current

Noda, Susumu, Kojima, Keisuke, Mitsunaga, Kazumasa, Kyuma, Kazuo, Nakayama, Takashi

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 351 KB

english, 1986

15

Silver ion-exchanged, buried, glass optical waveguides with symmetric index profile

Lagu, R. K., Ramaswamy, R. V.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 364 KB

english, 1986

16

Eigenmode analysis of phase-locked semiconductor laser arrays

Twu, Yihjye, Chen, Kuo-Liang, Wang, Shyh, Whinnery, J. R., Dienes, A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 426 KB

english, 1986

17

High-frequency amplification and generation in charge injection devices

Kastalsky, A., Abeles, J. H., Bhat, R., Chan, W. K., Koza, M. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 431 KB

english, 1986

18

Nondestructive depth profiling of carrier lifetimes in full silicon wafers

Guidotti, D., Batchelder, J. S., Van Vechten, J. A., Finkel, A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 467 KB

english, 1986

19

High resolution electron microscopic and spectroscopic characterization of semi-insulating polycrystalline silicon and its interface with single-crystal silicon

Wong, J., Jefferson, D. A., Sparrow, T. G., Thomas, J. M., Milne, R. H., Howie, A., Koch, E. F.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 482 KB

english, 1986

20

Electro-optical response of a liquid-crystalline fiber coupler

Goldburt, E. S., Russell, P. St. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 485 KB

english, 1986

21

Relationship between secondary defects and electrical activation in ion-implanted, rapidly annealed GaAs

Pearton, S. J., Hull, R., Jacobson, D. C., Poate, J. M., Williams, J. S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 571 KB

english, 1986

22

Diffusion of Ag and Hg at the Ag/(Hg, Cd)Te interface

Friedman, D. J., Carey, G. P., Shih, C. K., Lindau, I., Spicer, W. E., Wilson, J. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 524 KB

english, 1986

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