Optical Properties of the Partially Strain Relaxed...

IEEE Electron Device Letters 2011 / 02 Vol. 32; Iss. 2

Optical Properties of the Partially Strain Relaxed InGaN/GaN Light-Emitting Diodes Induced by p-Type GaN Surface Texturing

Sun, Yu-Hsuan, Cheng, Yun-Wei, Wang, Szu-Chieh, Huang, Ying-Yuan, Chang, Chun-Hsiang, Yang, Sheng-Chieh, Chen, Liang-Yi, Ke, Min-Yung, Li, Chi-Kang, Wu, Yuh-Renn, Huang, JianJang
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Volume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2010.2093503
Date:
February, 2011
File:
PDF, 333 KB
english, 2011
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